Development of high-performance novel low-dimensional structure antimonide infrared FPAs: challenges and solutions
Abstract
Infrared photodetectors and technology have experienced half a century of development. Two generation detectors have appeared: the first generation is mechanical scanning unit or linear array detectors, the second-generation is staring focal plane array detectors. It has formed a huge family of infrared detectors. Recent years, people gradually raised to the technical concept of third-generation infrared detectors which have high detecivity, large formate, low-cost,and multi-spectral response. Antimonide based type-Ⅱ InAs/GaSb superlattice has several fundamental properties that make it suitable for third-generation infrared detection technology: high quantum efficiency, low dark current density, tunable bandgap, high uniformity, and low cost. In this paper, we review the recent domestic and international research in third-generation infrared detector material and devices. and we focus on clarifying advantages of antimonide based type Ⅱ superlattice material and the development status at home and abroad. By analyzing the technology development process in a number of key research institutions, we hope to clarify the challenges and research trends of antimonide material in the next few years.
