References
[1]
Yang D R, Fan R X, Li L B, et al. Effect of nitrogen-oxygen complex on electricity properties of Czochralski silicon. Appl Phys Lett, 1996, 68: 487–489.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R, Fan R X, Li L B, et al. Effect of nitrogen-oxygen complex on electricity properties of Czochralski silicon. Appl Phys Lett, 1996, 68: 487–489&
[2]
Yu X G, Yang D R, Ma X Y, et al. Grown-in defects in nitrogen-doped Czochralski silicon. J Appl Phys, 2002, 92: 188–194.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yu X G, Yang D R, Ma X Y, et al. Grown-in defects in nitrogen-doped Czochralski silicon. J Appl Phys, 2002, 92: 188–194&
[3]
Yang D R, Que D L, Sumino K. Nitrogen effects on thermal donor and shallow thermal donor in silicon. J Appl Phys, 1995, 77: 943–946.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R, Que D L, Sumino K. Nitrogen effects on thermal donor and shallow thermal donor in silicon. J Appl Phys, 1995, 77: 943–946&
[4]
Yang D R, Fan R X, Li L B, et al. Donor formation in nitrogen doped silicon. J Appl Phys, 1996 80: 1493–1497.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R, Fan R X, Li L B, et al. Donor formation in nitrogen doped silicon. J Appl Phys, 1996 80: 1493–1497&
[5]
Yang D R, Yu X G, Ma X Y, et al. Germanium effect on void defects in Czochralski silicon. J Crystal Growth, 2002, 243: 371–374.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R, Yu X G, Ma X Y, et al. Germanium effect on void defects in Czochralski silicon. J Crystal Growth, 2002, 243: 371–374&
[6]
Yang D R. Defects in germanium-doped Czochralski silicon. In: 10th International conference on Extended defects in Semiconductors, Phys Stat Sol, 2005, 202(a): 931–938.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R. Defects in germanium-doped Czochralski silicon. In: 10th International conference on Extended defects in Semiconductors, Phys Stat Sol, 2005, 202(a): 931–938&
[7]
Yang D R, Chen J H, Ma X Y, et al. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits. J Crystal Growth, 2009, 311: 837–841.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yang D R, Chen J H, Ma X Y, et al. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits. J Crystal Growth, 2009, 311: 837–841&
[8]
Yu X G, Chen J H, Ma X Y, et al. Impurity engineering of Czochralski silicon. Mater Sci Engin R Rep, 2013 74: 1–33.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yu X G, Chen J H, Ma X Y, et al. Impurity engineering of Czochralski silicon. Mater Sci Engin R Rep, 2013 74: 1–33&
[9]
Sha J, Niu J J, Yang D R. Silicon Nanotubes Adv Mater, 2002, 17: 1219–1221.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Sha J, Niu J J, Yang D R. Silicon Nanotubes Adv Mater, 2002, 17: 1219–1221&
[10]
杨德仁.太阳电池材料.北京:化工出版社, 2007.
Google Scholar
http://scholar.google.com/scholar_lookup?title=杨德仁.太阳电池材料.北京:化工出版社, 2007&