SCIENTIA SINICA Informationis, Volume 48 , Issue 6 : 635-649(2018) https://doi.org/10.1360/N112018-00096

The application of functional oxide thin films in flexible sensor devices

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  • ReceivedApr 19, 2018
  • AcceptedApr 27, 2018
  • PublishedJun 6, 2018


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  • Figure 1

    (Color online) The process of transfer printing

  • Figure 2

    (Color online) PZT devices in wavy configurations on PDMS substrates. (a) Schematic illustration of the fabrication process; (b) optical images of a pair of wavy PZT nanoribbons with electrodes on PDMS; (c) PFM hysteresis loops of a wavy PZT ribbon on PDMS and a PZT film on Si, respectively [50]@Copyright 2011 ACS

  • Figure 3

    (Color online) Device with PZT thin film on PDMS substrates. (a) Exploded-view schematic illustration of the device; (b) optical images of the as-fabricated device; (c) the photograph of the device cointegrated with a microbattery and rectifier, mounted on the bovine lung; (d) the schematic of the five-layer stacked device [51]@Copyright 2014 PNAS

  • Figure 4

    (Color online) Flexible breath sensor with VO$_{2}$ thin film. (a) Schematic illustration of the fabrication process; (b) optical images of the as-fabricated device; (c) resistance changes at different environment temperatures (upper panel) and different air flow (lower panel) [62]@Copyright 2017 IOP

  • Figure 5

    (Color online) Flexible temperature-mechanical dual-parameter sensor with VO$_{2}$ thin film. (a) The schematic illustration of the change of electrical conductance with nano-cracks in the VO$_{2}$ thin film when applying strain on the $x$-axis and $y$-axis; (b) exploded-view schematic illustration and optical images of the device; (c) the measured and fitting result of the electrical resistance response to the strain; (d) the recorded resistance variations during 10000 cycles of bending-releasing at a frequency of 5 Hz with the maximum bending strain of 0.1% [63]@Copyright 2017 IEEE

  • Figure 6

    The signal processing of flexible temperature-mechanical dual-parameter sensor with VO$_{2}$ thin film. (a) The frequency spectrum of the recorded signal of the device after fast Fourier transformation; (b) the frequency spectrum corresponding to the body temperature signal; (c) the body temperature signal and pulse signal obtained by signal processing

  • Figure 7

    (Color online) Flexible photodetector based on ITO/Si heterojunction. (a) Schematic illustration of the fabrication process; (b) schematic released degeneracy of the Si conduction band under elastic uniaxial strain and the conduction band split of silicon; (c) the barrier height of the bent ITO/Si heterojunction versus its bending radius. The spherical represent theoretical barrier height. The red and green crosses represent the experimental barrier height calculated from the I-V curves and IPCE curves, respectively; (d) the response and recovery time of the flat photodetector and the one with a bending radius of 3 cm [65]@Copyright 2018 Royal Society of Chemistry