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SCIENTIA SINICA Informationis, Volume 47 , Issue 7 : 940(2017) https://doi.org/10.1360/N112016-00254

Flux-controlled memristor equivalent circuit based on SPWM control

More info
  • ReceivedOct 27, 2016
  • AcceptedFeb 14, 2017
  • PublishedJun 21, 2017

Abstract


Funded by

广东省自然科学基金(2014A030313247)

国家自然科学基金(51437005)

  • Table 1   Influences of different values of $G_{2}$ on the I/V curve area and the power
    Circuit parameter Parameter values
    $R_{\rm on}$ ($\Omega$) 5 10 10 5
    $k$ 1 1 0.67 0.5
    $G_{2}$ 0.1 0.05 0.034 0.05
    $|s|$ 88.5 44.2 29.6 44.2
    $P$ (W) 191.3 158.2 147.2 158.2
  • Table 2   Influences of different values of $V_{\rm IN}$ on the I/V curve area and the power
    Circuit parameter $V_{\rm IN}$ (V)
    42.4 56.6 70.7
    $|s|$ 9.6 22.8 44.2
    $P$ (W) 52.2 97 158.2
  • Table 3   Influences of different values of $f_{0}$ on the I/V curve area and the power
    Circuit parameter $f_{0}$ (Hz)
    15 20 25
    $|s|$ 44.2 33.2 26.5
    $P$ (W) 158.2 149.9 144.9
  • Table 4   Comparison of Results form simulations and experiments
    $(V_{\rm IN}/V, I/A)$ $V_{\rm IN}$=70.7 V $f_{0}$=15 Hz
    $f_{0}$=15 Hz $f_{0}$=20 Hz $f_{0}$=25 Hz $V_{\rm IN}$=42.4 V $V_{\rm IN}$=56.6 V $V_{\rm IN}$=70.7 V
    Simulation data (70.7, 11.2) (70.7, 10.0) (70.7, 9.5) (42.4, 6.7) (56.6, 8.8) (70.7, 11.2)
    Experiment data (69.0, 10.7) (69.0, 10.1) (69.0, 9.9) (42.0, 6.3) (56.0, 8.5) (69.0, 10.7)