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SCIENCE CHINA Materials, Volume 64 , Issue 11 : 2645-2654(2021) https://doi.org/10.1007/s40843-021-1670-0

Stable tin perovskite solar cells developed via additive engineering

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  • ReceivedFeb 6, 2021
  • AcceptedMar 18, 2021
  • PublishedMay 20, 2021

Abstract


Funded by

the National Natural Science Foundation of China(11834011,11911530142)


Acknowledgment

This work was supported by the National Natural Science Foundation of China (11834011 and 11911530142). We thank the discussion about the XPS data reduction with Ms. Limin Sun and Ms. Xue Ding (the Instrumental Analysis Center of Shanghai Jiao Tong University). We are grateful for the guidance and verification in device preparations and characterizations by Xiao Liu.


Interest statement

The authors declare that they have no conflict of interest.


Contributions statement

Yang X conducted the research project. Dai Z and Yang X conceived the idea. Dai Z, Lv T and Barbaud J carried out the fabrications and characterizations of materials and devices. Barbaud J and Dai Z carried out the DFT calculations and analyses. Tang W, Wang T, Qiao L, Zheng R and Chen H were involved in the data analyses. Dai Z, Lv T, Barbaud J and Yang X wrote the manuscript. Yang X, Zheng R and Han L revised the manuscript. All authors discussed and reviewed the final manuscript.


Author information

Zhensheng Dai is currently a PhD candidate at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He received his BS degree from the School of Materials Science and Engineering, Wuhan University of Technology, in 2016. His research focuses on highly efficient and stable perovskite solar cells.


Taoyuze Lv is a PhD student at the School of Physics, the University of Sydney, Australia. He received his bachelor’s degree in 2020 from Shenzhen University. His current research interest is the micro-scale simulation and characterization of the physical properties of perovskite materials.


Julien Barbaud is a PhD student at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He obtained his master’s degree in 2017 at l’Ecole des Mines d’Albi, France. His current research interest revolves around numerical simulation of materials applied to perovskite-based photovoltaic devices.


Xudong Yang received his PhD degree from the Chinese Academy of Sciences. He did postdoctoral research at the University of Cambridge, UK and the International Center for Young Scientists of the National Institute for Materials Science, Japan. He joined Shanghai Jiao Tong University as a distinguished researcher in 2014. His current research is focused on understanding the mechanisms of the photoelectron conversion, charge transport, and the fabrication of next-generation optoelectronic devices for applications in energy conversion.


Supplement

Supplementary information

Supporting data are available in the online version of the paper.


References

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  • Figure 1

    (a, b) SEM images of the control and the target films, respectively, deposited on the ITO/PEDOT:PSS substrates. The scale bar is 1 µm. (c, d) The light absorbance spectra of the control and target films, respectively, before and after heating at 85°C in an N2 glovebox (100 ppm O2, 10 ppm H2O) in the dark. (e, f) Narrow sweep of the XRD patterns between 13° and 15° of the control and target films, respectively, deposited on the ITO/PEDOT:PSS substrates after 0 and 3 h of oxidation in an air environment (25°C, 30% relative humidity).

  • Figure 2

    (a) A schematic representation of the role of acetate passivation in the extrinsic stability of FASnI3. (b) FTIR spectra of FAAc and the complex of FAAc and SnI2. (c, d) Sn 3d XPS spectra of the fresh control and target films, respectively, with their Sn4+ contents calculated as 10.68% and 5.02%, respectively. (e, f) Sn 3d XPS spectra of the control and target films exposed in air (25°C, 30% relative humidity) for 3 h, respectively, with their Sn4+ contents calculated as 55.08% and 29.75%, respectively.

  • Figure 3

    (a) Steady-state PL spectra of the control and target films on the glass and ITO/PCBM substrates. (b) TRPL spectra of the control and target films on the glass substrates. (c) C-V curves of the control and target film-based TPSCs with an ITO/SnO2/perovskite/PCBM/BCP/Ag structure. (d) Dark current curves of the devices with an ITO/SnO2/perovskite/PCBM/BCP/Ag structure.

  • Figure 4

    (a) I-V curves for the control and target film-based devices. (b) IPCE spectra for the control and target film-based devices. (c) The box plot chart for the distributions of PCEs measured for the control and target film-based devices (24 of each). (d) The stability test of encapsulated TPSCs under simulated AM 1.5G (100 mW cm−2) illumination at their maximum power point in air (25°C, relative humidity 20%–25%).

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