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SCIENCE CHINA Materials, Volume 63 , Issue 12 : 2560-2569(2020) https://doi.org/10.1007/s40843-020-1376-4

An integrated flexible multifunctional sensing system for simultaneous monitoring of environment signals

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  • ReceivedMar 5, 2020
  • AcceptedApr 28, 2020
  • PublishedJul 9, 2020

Abstract


Funded by

the National Natural Science Foundation of China(61874111,61625404)

the Young Elite Scientists Sponsorship Program by CAST(2018QNRC001)

China Postdoctoral Science Foundation(2016M601131)


Acknowledgment

This work was supported by the National Natural Science Foundation of China (61874111 and 61625404), the Young Elite Scientists Sponsorship Program by CAST (2018QNRC001) and China Postdoctoral Science Foundation (2016M601131).


Interest statement

The authors declare no conflict of interest.


Contributions statement

The paper was written through contributions of all authors. All authors have given approval to the final version of the paper.


Author information

Haoran Chen received his BE degree in 2015 from the University of Science and Technology Beijing. He is a PhD student at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests mainly focus on nanomaterials and optoelectronic devices.


Zheng Lou is an associate professor at the Institute of Semiconductors, Chinese Academy of Sciences. He received his BSc degree (2009) and PhD degree (2014) from Jilin University. His current research focuses on the flexible electronics based on low-dimensional materials, including pressure sensors, electronic-skin, transistors and photo-detectors.


Guozhen Shen received his BSc degree (1999) in chemistry from Anhui Normal University and PhD degree (2003) in chemistry from the University of Science and technology of China. He joined the Institute of Semiconductors, Chinese Academy of Sciences as a professor in 2013. His current research focuses on the flexible electronics and printable electronics, including transistors, photodetectors, sensors and flexible energy storage and conversion devices.


Supplement

Supplementary information

Supporting data are available in the online version of the paper.


References

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  • Figure 1

    (a) A schematic of five pixels of a multimode wearable sensor capable of mapping five separate stimuli. PD: photodetector. (b) A photograph of the multifunctional device on a PI substrate with good flexibility. (c) A photograph of the matrix attached to the back of the hand. (d) SEM images and (e) XRD patterns of the four different sensing materials, including ZnO, CdS, SnS, SrGe4O9. Schematic device structure of the three different kinds of sensors, (f) temperature sensor, (g) photodetector and (h) gas sensor.

  • Figure 2

    (a) Sensing mechanism of the NW-based photodetector. (b) I-V curves of the CdS NW-based photodetector in dark and under 480 nm light illumination, respectively. (c) The dependence of photocurrent on light intensity (IP1.01). (d) Transient photoresponse properties of the photodetector with the light intensity of 6.75 μW cm−2. (e) Enlarged part of the middle cycle of (d).

  • Figure 3

    (a) I-V characteristics of the ZnO NW-based photodetector under UV light illumination. (b) The relationship between photocurrent and light intensity (IP0.71). (c) The transient photoresponse curves of the ZnO NW-based photodetector under UV light illumination. (d) The single response and recovery curve of the ZnO-based photodetector.

  • Figure 4

    (a) Optical image of the measurement of the SnS-based device in the fabricated flexible integrating system. (b) I-V curves of the photodetector measured under NIR light illumination and in the dark, respectively. Inset is the enlarged part from 0.9–2.1 V. (c) The photoreponse curve of the SnS-based photodetector under 808 nm light with 2 V bias voltage. (d) Response and recover time of the device.

  • Figure 5

    (a) Photographs and optical image of the flexible temperature sensor. (b) The relationship between resistance and temperature of the Ni microwires-based sensor. (c) Power dependence of the CdS NW photodetector, (d) dynamic photoresponse curves of the CdS NW photodetector, (e) power dependence of the ZnO NW photodetector, (f) dynamic photoresponse of the ZnO NW photodetector under different environment temperatures (25 to 75°C).

  • Figure 6

    (a) Schematic of the sensing mechanism of SrGe4O9 NW-based gas sensor. (b) Cyclic response curves of the SrGe4O9 NW sensor under 100 ppm of NH3 at room temperature. (c) Response curves of the SrGe4O9 NW sensor toward NH3 with different concentrations at room temperature. (d) Time-resolved response of the SrGe4O9 NW device towards 100 ppm NH3 under different environment temperatures.

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