Organic single-crystal phototransistor with unique wavelength-detection characteristics

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  • ReceivedSep 11, 2018
  • AcceptedOct 19, 2018
  • PublishedNov 15, 2018



The authors acknowledge financial support from the Ministry of Science and Technology of China(Grants,2017YFA0204503,2016YFB0401100)

the National Natural Science Foundation of China(51725304,51633006,51703159,51733004)

and the Strategic Priority Research Program(XDB12030300)


The authors acknowledge financial support from the Ministry of Science and Technology of China (2017YFA0204503 and 2016YFB0401100), the National Natural Science Foundation of China (51725304, 51633006, 51703159 and 51733004), and the Strategic Priority Research Program (XDB12030300) of the Chinese Academy of Sciences.

Interest statement

The authors declare that they have no conflict of interest.

Contributions statement

Dong H and Hu W conceived and designed the experiments. Zhou K provided the help for constructing micro/nano-single crystal transistors and electrical measurement. Zhang Q helped paint. Liu D, Liu J, Li J and Zhao Q helped analyze the experimental data. Dong H, Hu M, and Liu J co-wrote the manuscript and all the authors contributed to the general discussion.

Author information

Mengxiao Hu obtained her BSc degree from Qingdao University in 2016. Now she is a master student at the Department of Chemistry, Capital Normal University (CNU), China. Her current research focuses on organic optoelectronic functional devices.

Huanli Dong is a Professor of the Institute of Chemistry, Chinese Academy of Sciences (CAS). She received her PhD degree from the Institute in 2009 after she got her MSc degree from Fujian Institute of Research on the Structure of Material, CAS, in 2006. Her current research focuses on organic/polymer optoelectronic materials and devices, including molecular structure design, solid state structure modulation as well as device physics.

Supplementary data

Supplementary information

The supporting data are available in the online version of the paper.


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  • Figure 1

    (a) UV-vis spectra of CHICZ crystals, inset: the molecular structure of CHICZ. (b) Schematic diagram of CHICZ single crystal phototransistor with light illumination from the top side. (c--e) Molecular packing structure of CHICZ in single crystals, seen from different directions.

  • Figure 2

    (a) AFM image and (b) polarizing microscope image of an individual CHICZ single crystal. (c) XRD pattern of large-area CHICZ single crystals directly grown on the OTS-modified SiO2/Si substrate. (d) TEM image of an individual CHICZ crystal and its corresponding SAED pattern shown in inside.

  • Figure 3

    (a) Optical image of a typical device based on an individual CHICZ single crystal. Output (b) and transfer (c) characteristics of the phototransistor under the different light power. (d) The dependence of Rmax and Pmax with the intensity of light, respectively.

  • Figure 4

    (a) Transfer characteristics of CHICZ phototransistor measured under dark and a series of monochromatic light illumination (λ=400–600 nm, interval 10 nm). (b) Comparison of absorption spectrum and wavelength dependence of drain-source current for CHICZ device. (c) Wavelength dependence of maximum photoresponsivity (Rmax) and photosensitivity (Pmax). (d) Gate dependence of photoresponsivity and photosensitivity. (e) Wavelength dependence of log(P) based on CHICZ single crystals. (f) The linear correlation comparison of several materials.


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