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SCIENCE CHINA Information Sciences, Volume 64 , Issue 11 : 219403(2021) https://doi.org/10.1007/s11432-021-3224-2

A unified hybrid compact model of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes for mixer and rectifier applications

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  • ReceivedJan 20, 2021
  • AcceptedMar 22, 2021
  • PublishedSep 10, 2021

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61925110, 62004184, 62004186, 51961145110), MOST of China (Grant No. 2018YFB0406504), Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSWJSC048), Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002).


References

[1] Konishi K, Goto K, Murakami H. 1-kV vertical Ga$_{2}$O$_{3}$ field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110: 103506 CrossRef ADS Google Scholar

[2] Pearton S J, Ren F, Tadjer M. J Appl Phys, 2018, 124: 220901 CrossRef Google Scholar

[3] Li W, Nomoto K, Hu Z. IEEE Electron Device Lett, 2020, 41: 107-110 CrossRef ADS Google Scholar

[4] He Q, Mu W, Fu B. Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics *These authors contributed equally to this work.. IEEE Electron Device Lett, 2018, : 1-1 CrossRef Google Scholar

[5] Latreche A. Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes. SN Appl Sci, 2019, 1: 188 CrossRef Google Scholar

[6] Li W, Saraswat D, Long Y. Appl Phys Lett, 2020, 116: 192101 CrossRef ADS Google Scholar

[7] Hu Z, Lv Y, Zhao C, et al. Beveled fluoride plasma treatment for vertical $\beta$-Ga$_2$O$_3$ Schottky barrier diode with high reverse blocking voltage and low turn-on voltage. IEEE Electron Device Lett, 2020, 41: 441444. Google Scholar

[8] Zhou H, Feng Q, Ning J. High-Performance Vertical beta -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination. IEEE Electron Device Lett, 2019, 40: 1788-1791 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) (a) Cross-sections of SBD4; (b) experimental forward I-Vcurves (symbols) and I-Vmodel (solid lines); (c), (d) experimentally measured C-Vcurves (symbols) of SBD1, SBD2, SBD3, and SBD4 and corresponding C-Vmodel (solid lines); (e) configuration of the full-wave rectifier circuit; (f) input and output voltage waveforms of the full-wave rectifier circuit under the frequency of 2 MHz; (g) illustration of the mixer circuit; (h) the output power component vs. frequency of the mixer.

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