SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140407(2021) https://doi.org/10.1007/s11432-020-3180-5

Interface engineering of ferroelectric-gated MoS$_{2}$ phototransistor

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  • ReceivedDec 14, 2020
  • AcceptedJan 29, 2021
  • PublishedMar 8, 2021



This work was supported by National Natural Science Foundation of China (Grant Nos. 61835012, 61905267, 61974153, 62025405), Projects of International Cooperation and Exchanges NSFC (Grant No. 62011530043), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44020100), Key Research Program of Frontier Sciences, CAS (Grant No. ZDBS-LY-JSC045), and Shanghai Sailing Program (Grant No. 19YF1454900).


Figures S1–S4.


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  • Figure 1

    (Color online) Structure and characterization of MoS$_{2}$, h-BN, and their heterojunction. (a) Optical microscope image of MoS$_{2}$ covered with h-BN. The inset in the top-right corner shows an AFM image of the h-BN-covered MoS$_{2}$ (measured thicknesses of MoS$_{2}$ and h-BN are 3 and 5 nm, respectively). Scale bar, 10 $\mu$m. (b) and (c) show the Raman shift of h-BN and MoS$_{2}$, respectively. (d) Photoluminescence spectra observed for MoS$_{2}$, h-BN-covered MoS$_{2}$, and h-BN.

  • Figure 2

    (Color online) Structure and electrical characteristics of the device. (a) Schematic showing the device structure built in this study. One channel is in direct contact with the P(VDF-TrFE) and the other channel is covered by atomically thin h-BN. protectłinebreak (b) Transfer characteristics of the two devices (device #1, bare MoS$_{2}$ channel; device #2, h-BN-covered MoS$_{2}$ channel) with $V_{\rm~sd}$ = 1 V. The inset shows the optical image of the device measured in this study. Scale bar, 10 $\mu$m. (c) The $I_{\rm~sd}$-$V_{\rm~sd}$ characteristics of the two types of devices under three different states of P(VDF-TrFE): fresh state (P(VDF-TrFE) without polarization), $P_\text{down}$ state (P(VDF-TrFE) polarized downward by a $V_\text{tg}$ of 15 V), and $P_\text{up}$ state (P(VDF-TrFE) polarized upward by a $V_\text{tg}$ of $-15$ V). (d) The extracted carrier mobility, where $L~=~4.29$ $\mu$m and $W~=~5$ $\mu$m are the channel length and width, respectively, of device #1. $L~=~6.43$ $\mu$m and $W~= 2.14$ $\mu$m are the channel length and width, respectively, of device #2.

  • Figure 3

    (Color online) Comparison of optoelectronic performance exhibited by the two MoS$_{2}$ phototransistors. (a) Photocurrent switching characteristics of the two MoS$_{2}$ channel types at $V_\text{sd}=~1$ V and $V_\text{tg}=~-15$ V. The actual laser power that illuminates the device is $\sim$0.5 $\mu$W. The (b) rise ($t_{\rm~on}$) and (c) decay ($t_\text{off}$) times of the photocurrent associated with the two channels. For the MoS$_{2}$ covered with the h-BN channel, the $t_\text{on}$ and $t_\text{off}$ (40 and 70 ms, respectively) are both faster than those of the MoS$_{2}$ channel (600 and 500 ms, respectively). (d) Responsivity and (e) detectivity of the two MoS$_{2}$ device types. The h-BN-covered device exhibits better responsivity and detectivity than the bare MoS$_{2}$ device. (f) Comparison of the photocurrent on/off ratios associated with the two types of devices.

  • Figure 4

    (Color online) Analysis of the photodetection mechanism of MoS$_{2}$ phototransistors. (a) Schematic showing the crosssection of our device under 637 nm laser irradiation. (b) For the bare MoS$_{2}$ device, when photogenerated carriers move in the MoS$_{2}$ channel, holes will be captured by negative traps in the interface between MoS$_{2}$ and P(VDF-TrFE). This will lead to a decrease in the photocurrent and an increase in carrier scattering. (c) When the photogenerated carriers move in the h-BN-covered MoS$_{2}$ channel, the photogenerated electrons and holes will be separated by an external bias, thereby generating a photocurrent. This kind of device is fast and stable owing to a lack of traps in the interface. (d) The photocurrent on/off ratio and carrier mobility of our device compared to those reported in previous studies.