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SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140403(2021) https://doi.org/10.1007/s11432-020-3179-9

Efficient graphene in-plane homogeneous p-n-p junction based infraredphotodetectors with low dark current

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  • ReceivedOct 29, 2020
  • AcceptedJan 29, 2021
  • PublishedMar 8, 2021

Abstract


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 62022081, 61974099, 61705152, 61604102), National Key Research Development Program (Grant Nos. 2016YFA0201900, 2016YFA0201902), Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ202002), and Collaborative Innovation Centre of Suzhou Nano Science Technology.


Supplement

Appendix


References

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  • Figure A1

    Transfer characteristics of the pristine graphene transistor on SiO$_{2}$/Si substrate under dark condition.

  • Figure A2

    (Color online) The photoresponse of the device under different bias voltages.

  • Figure 3

    (Color online) Photodetection behaviors of the device under different incident powers. (a) The characteristic drain-source current in logarithmic plot versus drain-source voltage in dark and under 1064 nm IR light illumination at room temperature. (b) The photoresponse to periodical light pulses of device at zero external bias. (c) The rise time and the fall time of the device. (d) The dependence of photocurrent on illuminated light power at zero external bias voltage.

  • Figure 4

    (Color online) The photodetection behaviors of the device under light illumination of different IR light wavelengths. (a) The drain-source current versus drain-source voltage curves. (b) The photocurrent response to periodical light pulses. protectłinebreak (c) The responsivity versus light power curves of the device. (d) The self-driven photoresponse behaviors of the device under 4 $\mu~$m MIR light irradiation.

  • Figure 5

    (Color online) Photodetection behaviors of the device based on different structures. (a) The dark currents of three different devices. (b) The photocurrent comparisons of different devices.

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