SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140403(2021) https://doi.org/10.1007/s11432-020-3179-9

Efficient graphene in-plane homogeneous p-n-p junction based infraredphotodetectors with low dark current

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  • ReceivedOct 29, 2020
  • AcceptedJan 29, 2021
  • PublishedMar 8, 2021



This work was supported by National Natural Science Foundation of China (Grant Nos. 62022081, 61974099, 61705152, 61604102), National Key Research Development Program (Grant Nos. 2016YFA0201900, 2016YFA0201902), Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ202002), and Collaborative Innovation Centre of Suzhou Nano Science Technology.




[1] Tielrooij K J, Piatkowski L, Massicotte M. Generation of photovoltage in graphene on a femtosecond timescale through efficient carrier heating. Nat Nanotech, 2015, 10: 437-443 CrossRef ADS arXiv Google Scholar

[2] Du X, Skachko I, Barker A. Approaching ballistic transport in suspended graphene. Nat Nanotech, 2008, 3: 491-495 CrossRef ADS arXiv Google Scholar

[3] Geim A K. Graphene: Status and Prospects. Science, 2009, 324: 1530-1534 CrossRef ADS arXiv Google Scholar

[4] Zhang B Y, Liu T, Meng B. Broadband high photoresponse from pure monolayer graphene photodetector. Nat Commun, 2013, 4: 1811 CrossRef ADS Google Scholar

[5] Liu C H, Chang Y C, Norris T B. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat Nanotech, 2014, 9: 273-278 CrossRef ADS Google Scholar

[6] Wang X, Cheng Z, Xu K. High-responsivity graphene/silicon-heterostructure waveguide photodetectors. Nat Photon, 2013, 7: 888-891 CrossRef ADS Google Scholar

[7] Youngblood N, Anugrah Y, Ma R. Multifunctional Graphene Optical Modulator and Photodetector Integrated on Silicon Waveguides. Nano Lett, 2014, 14: 2741-2746 CrossRef ADS arXiv Google Scholar

[8] Xia F, Mueller T, Lin Y. Ultrafast graphene photodetector. Nat Nanotech, 2009, 4: 839-843 CrossRef ADS arXiv Google Scholar

[9] Mueller T, Xia F, Avouris P. Graphene photodetectors for high-speed optical communications. Nat Photon, 2010, 4: 297-301 CrossRef Google Scholar

[10] Bae S, Kim H, Lee Y. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat Nanotech, 2010, 5: 574-578 CrossRef ADS Google Scholar

[11] Li X, Cai W, An J. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science, 2009, 324: 1312-1314 CrossRef ADS arXiv Google Scholar

[12] Weiss E, Klin O, Grossmann S. InAsSb-based XB $_{n}$n bariodes grown by molecular beam epitaxy on GaAs. J Cryst Growth, 2012, 339: 31-35 CrossRef ADS Google Scholar

[13] Yin J, Paiella R. Multiple-junction quantum cascade photodetectors for thermophotovoltaic energy conversion. Opt Express, 2010, 18: 1618-1629 CrossRef ADS Google Scholar

[14] Lemme M C, Koppens F H L, Falk A L. Gate-Activated Photoresponse in a Graphene p-n Junction. Nano Lett, 2011, 11: 4134-4137 CrossRef ADS arXiv Google Scholar

[15] Seo B H, Youn J, Shim M. Direct Laser Writing of Air-Stable p-n Junctions in Graphene. ACS Nano, 2014, 8: 8831-8836 CrossRef Google Scholar

[16] Kim S, Shin D H, Kim C O. Graphene p-n Vertical Tunneling Diodes. ACS Nano, 2013, 7: 5168-5174 CrossRef Google Scholar

[17] Tian P, Tang L, Teng K S. Recent Advances in Graphene Homogeneous p-n Junction for Optoelectronics. Adv Mater Technol, 2019, 4: 1900007 CrossRef Google Scholar

[18] Lin L, Liao L, Yin J. Building graphene p-n junctions for next-generation photodetection. Nano Today, 2015, 10: 701-716 CrossRef Google Scholar

[19] Herring P K, Hsu A L, Gabor N M. Photoresponse of an Electrically Tunable Ambipolar Graphene Infrared Thermocouple. Nano Lett, 2014, 14: 901-907 CrossRef ADS Google Scholar

[20] Oh H, Coh S, Son Y W. Inhibiting Klein Tunneling in a Graphene p -n Junction without an External Magnetic Field. Phys Rev Lett, 2016, 117: 016804 CrossRef ADS arXiv Google Scholar

[21] Brun B, Moreau N, Somanchi S. Imaging Dirac fermions flow through a circular Veselago lens. Phys Rev B, 2019, 100: 041401 CrossRef ADS arXiv Google Scholar

[22] D'Arsié L, Esconjauregui S, Weatherup R S. Stable, efficient p-type doping of graphene by nitric acid. RSC Adv, 2016, 6: 113185-113192 CrossRef ADS Google Scholar

[23] Xie Z, Yao R, Zhang Y. Effect of Au$_{2}$Cl$_{6}$ doping on stability and work function of graphene. Physica B-Condensed Matter, 2019, 558: 1-4 CrossRef ADS Google Scholar

[24] Liang C, Wang Y, Li T. Synthesis of sulfur-doped p-type graphene by annealing with hydrogen sulfide. Carbon, 2015, 82: 506-512 CrossRef Google Scholar

[25] Chiu H Y, Perebeinos V, Lin Y M. Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering. Nano Lett, 2010, 10: 4634-4639 CrossRef ADS Google Scholar

[26] Liu N, Tian H, Schwartz G. Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene. Nano Lett, 2014, 14: 3702-3708 CrossRef ADS Google Scholar

[27] Kim C O, Kim S, Shin D H. High photoresponsivity in an all-graphene p-n vertical junction photodetector. Nat Commun, 2014, 5: 3249 CrossRef ADS Google Scholar

[28] Wang S, Sekine Y, Suzuki S. Photocurrent generation of a single-gate graphene p-n junction fabricated by interfacial modification. Nanotechnology, 2015, 26: 385203 CrossRef ADS Google Scholar

[29] Suk J W, Kitt A, Magnuson C W. Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates. ACS Nano, 2011, 5: 6916-6924 CrossRef Google Scholar

[30] Chen Y, Gong X L, Gai J G. Progress and Challenges in Transfer of Large?Area Graphene Films. Adv Sci, 2016, 3: 1500343 CrossRef Google Scholar

[31] Liu Y, Shivananju B N, Wang Y. Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene-Black Phosphorus Heterostructure. ACS Appl Mater Interfaces, 2017, 9: 36137-36145 CrossRef Google Scholar

[32] Das A, Pisana S, Chakraborty B. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat Nanotech, 2008, 3: 210-215 CrossRef Google Scholar

[33] Novoselov K S, Geim A K, Morozov S V. Two-dimensional gas of massless Dirac fermions in graphene. Nature, 2005, 438: 197-200 CrossRef ADS arXiv Google Scholar

[34] Sun T, Wang Y, Yu W. Small, 2017, 13: 1701881 CrossRef Google Scholar

[35] Latorre-Sánchez M, Primo A, Atienzar P. p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors. Small, 2015, 11: 970-975 CrossRef Google Scholar

[36] Wang G, Zhang M, Chen D. Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors. Nat Commun, 2018, 9: 5168 CrossRef ADS Google Scholar

[37] Yu X, Shen Y, Liu T. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation. Sci Rep, 2015, 5: 12014 CrossRef ADS Google Scholar

[38] Lin L, Xu X, Yin J. Tuning Chemical Potential Difference across Alternately Doped Graphene p-n Junctions for High-Efficiency Photodetection. Nano Lett, 2016, 16: 4094-4101 CrossRef ADS Google Scholar

  • Figure A1

    Transfer characteristics of the pristine graphene transistor on SiO$_{2}$/Si substrate under dark condition.

  • Figure A2

    (Color online) The photoresponse of the device under different bias voltages.

  • Figure 3

    (Color online) Photodetection behaviors of the device under different incident powers. (a) The characteristic drain-source current in logarithmic plot versus drain-source voltage in dark and under 1064 nm IR light illumination at room temperature. (b) The photoresponse to periodical light pulses of device at zero external bias. (c) The rise time and the fall time of the device. (d) The dependence of photocurrent on illuminated light power at zero external bias voltage.

  • Figure 4

    (Color online) The photodetection behaviors of the device under light illumination of different IR light wavelengths. (a) The drain-source current versus drain-source voltage curves. (b) The photocurrent response to periodical light pulses. protectłinebreak (c) The responsivity versus light power curves of the device. (d) The self-driven photoresponse behaviors of the device under 4 $\mu~$m MIR light irradiation.

  • Figure 5

    (Color online) Photodetection behaviors of the device based on different structures. (a) The dark currents of three different devices. (b) The photocurrent comparisons of different devices.