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SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140408(2021) https://doi.org/10.1007/s11432-020-3155-7

A compact model for transition metal dichalcogenide field effect transistorswith effects of interface traps

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  • ReceivedNov 8, 2020
  • AcceptedJan 6, 2021
  • PublishedMar 8, 2021

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61734003, 61521001, 61927808, 61851401).


References

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  • Figure 1

    (Color online) (a) Schematic of a top-gate FET with a monolayer MoS$_{2}$ as its active channel. (b) Equivalent capacitive circuit of the MoS$_{2}$ FET. (c) Schematic of $V_{\rm~gs}$ dependences of capacitances and $I_{\rm~ds}$. (d) Measured (symbol) and simulated (line) transfer characteristics. (e) Simulated $V_{\rm~gs}$ dependence of capacitances. (f) Measured (symbol) and simulated (line) output characteristics. (g) Simulated Gummel symmetry test results.