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This work was supported by National Natural Science Foundation of China (Grant Nos. 61734003, 61521001, 61927808, 61851401).
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Figure 1
(Color online) (a) Schematic of a top-gate FET with a monolayer MoS$_{2}$ as its active channel. (b) Equivalent capacitive circuit of the MoS$_{2}$ FET. (c) Schematic of $V_{\rm~gs}$ dependences of capacitances and $I_{\rm~ds}$. (d) Measured (symbol) and simulated (line) transfer characteristics. (e) Simulated $V_{\rm~gs}$ dependence of capacitances. (f) Measured (symbol) and simulated (line) output characteristics. (g) Simulated Gummel symmetry test results.