SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140408(2021) https://doi.org/10.1007/s11432-020-3155-7

A compact model for transition metal dichalcogenide field effect transistorswith effects of interface traps

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  • ReceivedNov 8, 2020
  • AcceptedJan 6, 2021
  • PublishedMar 8, 2021


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61734003, 61521001, 61927808, 61851401).


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  • Figure 1

    (Color online) (a) Schematic of a top-gate FET with a monolayer MoS$_{2}$ as its active channel. (b) Equivalent capacitive circuit of the MoS$_{2}$ FET. (c) Schematic of $V_{\rm~gs}$ dependences of capacitances and $I_{\rm~ds}$. (d) Measured (symbol) and simulated (line) transfer characteristics. (e) Simulated $V_{\rm~gs}$ dependence of capacitances. (f) Measured (symbol) and simulated (line) output characteristics. (g) Simulated Gummel symmetry test results.


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