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This work was supported by National Natural Science Foundation of China (Grant Nos. 61734003, 61521001, 61927808, 61851401).
[1] Tang H, Zhang H, Chen X. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci China Inf Sci, 2019, 62: 220401 CrossRef Google Scholar
[2] Rabaey J M. Digital Integrated Circuits: A Design Perspective. 2nd ed. 2003. Google Scholar
[3] Qiu H, Xu T, Wang Z. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat Commun, 2013, 4: 2642 CrossRef ADS arXiv Google Scholar
[4] Fang N, Toyoda S, Taniguchi T. Adv Funct Mater, 2019, 29: 1904465 CrossRef Google Scholar
[5] Jiménez D. Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors. Appl Phys Lett, 2012, 101: 243501 CrossRef ADS arXiv Google Scholar
[6] Marin E G, Bader S J, Jena D. A New Holistic Model of 2-D Semiconductor FETs. IEEE Trans Electron Devices, 2018, 65: 1239-1245 CrossRef ADS Google Scholar
[7] Cao W, Kang J, Liu W. A Compact Current-Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect. IEEE Trans Electron Devices, 2014, 61: 4282-4290 CrossRef ADS Google Scholar
[8] Suryavanshi S V, Pop E. S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities. J Appl Phys, 2016, 120: 224503 CrossRef ADS arXiv Google Scholar
[9] Li W, Zhou J, Cai S. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat Electron, 2019, 2: 563-571 CrossRef Google Scholar
Figure 1
(Color online) (a) Schematic of a top-gate FET with a monolayer MoS$_{2}$ as its active channel. (b) Equivalent capacitive circuit of the MoS$_{2}$ FET. (c) Schematic of $V_{\rm~gs}$ dependences of capacitances and $I_{\rm~ds}$. (d) Measured (symbol) and simulated (line) transfer characteristics. (e) Simulated $V_{\rm~gs}$ dependence of capacitances. (f) Measured (symbol) and simulated (line) output characteristics. (g) Simulated Gummel symmetry test results.
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