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SCIENCE CHINA Information Sciences, Volume 64 , Issue 11 : 219404(2021) https://doi.org/10.1007/s11432-020-3140-4

A physics-based electromigration reliability model for interconnects lifetime prediction

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  • ReceivedOct 21, 2020
  • AcceptedDec 14, 2020
  • PublishedOct 12, 2021

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant No. 61674008) and National Key Research and Development (Grant No. 2016YFA0202101).


Supplement

Appendix A.


References

[1] Ji Z, Chen H, Li X. Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities. Sci China Inf Sci, 2019, 62: 226401 CrossRef Google Scholar

[2] Huang R, Wu H M, Kang J F. Challenges of 22 nm and beyond CMOS technology. Sci China Ser F-Inf Sci, 2009, 52: 1491-1533 CrossRef Google Scholar

[3] Ahn W, Jiang C, Xu J, et al. A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison. In: IEDM, 2017, 330-333. Google Scholar

[4] Tan C M, Gao Z, Li W, et al. Applications of finite element methods for reliability studies on ULSI interconnections. Springer, 2011. Google Scholar

[5] Cai L, Chen W, Huang P. Self-heating aware EM reliability prediction of advanced CMOS technology by kinetic Monte Carlo method. MicroElectron Reliability, 2020, 107: 113626 CrossRef Google Scholar

[6] Sukharev V, Zschech E. A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength. J Appl Phys, 2004, 96: 6337-6343 CrossRef ADS Google Scholar

[7] Zheng H, Yin B, Zhou K. Temperature-dependent activation energy of electromigration in Cu/porous low-k interconnects. J Appl Phys, 2017, 122: 074501 CrossRef ADS Google Scholar

[8] Lin M H, Oates A S. AC and Pulsed-DC Stress Electromigration Failure Mechanisms in Cu Interconnects. In: IITC, 2013, 1-3. Google Scholar

[9] Li S, Sellers M, Basaran C. Lattice Strain Due to an Atomic Vacancy. IJMS, 2009, 10: 2798-2808 CrossRef Google Scholar

  • Figure 1

    (Color online) (a) Physics-based EM reliability model of interconnects, which accounts for the process of resistance evolution; (b) modeling resistance evolution in comparison of experimental data [5]; (c) EM lifetime prediction with different operation current densities; (d) EM lifetime in pulse operation with different duty cycles.

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