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SCIENCE CHINA Information Sciences, Volume 64 , Issue 4 : 140404(2021) https://doi.org/10.1007/s11432-020-3101-1

Bi$_2$O$_2$Se/BP van der Waals heterojunction for high performance broadband photodetector

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  • ReceivedSep 18, 2020
  • AcceptedOct 26, 2020
  • PublishedMar 2, 2021

Abstract


Acknowledgment

This work was supported by National Key Research and Development Program of China (Grant Nos. 2017YFA0205700, 2019YFA0308000), National Natural Science Foundation of China (Grant Nos. 61774034, 91963130, 11704068, 61705106), Jiangsu Natural Science Foundation (Grant No. BK20170694), and the Fundamental Research Funds for the Central Universities.


Supplement

Figures S1–S5.


References

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  • Figure 1

    (Color online) Structural characterizations of Bi$_{2}$O$_{2}$Se/BP vdW heterojunction. (a) Schematic of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction photodetector. (b) Raman spectra of BP, Bi$_{2}$O$_{2}$Se, and Bi$_{2}$O$_{2}$Se/BP heterojunction regions. (c) and (d) Optical and AFM images of the device. The scale bar is 6 $\mu~$m. (e) Height profile of BP and Bi$_{2}$O$_{2}$Se flakes corresponding to the white line marked in (d).

  • Figure 2

    (Color online) Electrical characterizations of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction. (a) The transfer characteristics of the Bi$_{2}$O$_{2}$Se FET and BP FET. (b) $I_{\rm~ds}$-$V_{\rm~ds}$ characteristic of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction. The inset shows the curve plotted on logarithmic scale. (c) Energy band diagram of the BP/Bi$_{2}$O$_{2}$Se vdW heterojunction at equilibrium before and after contact. (d) Energy band diagrams of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction device under different bias voltage $V_{\rm~ds}$.

  • Figure 3

    (Color online) Photoresponse of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction. (a) Power depended $I_{\rm~ds}$-$V_{\rm~ds}$ curves under 700 nm laser illumination. The inset is the schematic diagram of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction based photovoltaic device. protectłinebreak (b) The enlarged view of the $I_{\rm~ds}$-$V_{\rm~ds}$ curves in (a). (c) The photocurrent extracted from (b). (d) Scanning photocurrent mapping of the device under 532 nm laser illumination at $V_{\rm~ds}=~0$ V. The scale bar is 10 $\mu~$m. (e) Energy band diagram of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction under 700 nm laser illumination at reverse (i), zero (ii), forward (iii) bias.

  • Figure 4

    (Color online) High performance of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction photodetector. (a) and (b) Power depended $R$ and $D$* of Bi$_{2}$O$_{2}$Se, BP, and Bi$_{2}$O$_{2}$Se/BP heterojunction under 700 nm illumination at $V_{\rm~ds}=~-1$ V. (c) Photoswitching response under 700 nm laser illumination at $V_{\rm~ds}=~-1$ V. (d) The extracted response time from the falling edge in (c). (e) Power depended $R$ and $D$* of the Bi$_{2}$O$_{2}$Se/BP vdW heterojunction photodetector under three near-infrared waveband light (850 nm, 1310 nm and 1550 nm) at $V_{\rm~ds}=~-1$ V. (f) Comparison of the $R$ of Bi$_{2}$O$_{2}$Se/BP vdW heterojunction with other photovoltaic photodetectors based on BP and Bi$_{2}$O$_{2}$Se vdW heterojunction.