SCIENCE CHINA Information Sciences, Volume 64 , Issue 8 : 189403(2021) https://doi.org/10.1007/s11432-020-3098-x

Controlled nano-cracking actuated by an in-plane voltage

More info
  • ReceivedApr 23, 2020
  • AcceptedOct 10, 2020
  • PublishedMay 21, 2021


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 62074063, 61904060, 61821003, 61674062), National Key Research and Development Program of China (Grant No. 2020AAA0109000), Research Project of Wuhan Science and Technology Bureau (Grant No. 2019010701011394), and Fundamental Research Funds for the Central Universities (Grant No. HUST: 2018KFYXKJC019).


Appendixes A–F.


[1] Kang D, Pikhitsa P V, Choi Y W. Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system. Nature, 2014, 516: 222-226 CrossRef ADS Google Scholar

[2] Zhao Q, Wang W, Shao J. Nanoscale Electrodes for Flexible Electronics by Swelling Controlled Cracking. Adv Mater, 2016, 28: 6337-6344 CrossRef Google Scholar

[3] Nam K H, Park I H, Ko S H. Patterning by controlled cracking. Nature, 2012, 485: 221-224 CrossRef ADS Google Scholar

[4] Liu Z Q, Liu J H, Biegalski M D. Electrically reversible cracks in an intermetallic film controlled by an electric field. Nat Commun, 2018, 9: 41 CrossRef ADS Google Scholar

[5] Luo Q, Guo Z, Huang H B, et al. Nanoelectromechanical switches by controlled switchable cracking. IEEE Electron Device Lett, 2019, 29: 131-133. Google Scholar

[6] í?iguez J, Zubko P, Luk'yanchuk I. Ferroelectric negative capacitance. Nat Rev Mater, 2019, 4: 243-256 CrossRef ADS Google Scholar

[7] Lee J O, Song Y H, Kim M W. A sub-1-volt nanoelectromechanical switching device. Nat Nanotech, 2013, 8: 36-40 CrossRef ADS Google Scholar

[8] Luo Q, Guo Z, Zhang S. Crack-Based Complementary Nanoelectromechanical Switches for Reconfigurable Computing. IEEE Electron Device Lett, 2020, 41: 784-787 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) (a) Non-volatile switching of single-crack: (I) and (II) the open and closed state of the single-crack after scanning V$_{\rm~C}$; (III) the repeated I$_{\rm~sd}$-V$_{\rm~C}$ loops of the single-crack based device; (IV) the corresponding switching leakage current (I$_{\rm~L}$) in the PMN-PT substrate. (b) Complementary switching of two-crack: (I) and (II) the optical images of these two cracks (crack-1 and crack-2) in opposite states, respectively; (III) the complementary resistive switching I-V$_{\rm~C}$ characteristics; (c) complementary switching mechanism of crack under an in-plane voltage: verification from COMSOL simulation that the complementary E$_{z}$ distributions of the devices with a gap width of 30 $\mu$m (I) and 300 nm (II), respectively. (d) Reconfigurable logic (RL) implemented by complementary extended two cracks: (I) and (II) the optical images of complementary two cracks under V$_{\rm~C}$; (III) the complementary resistive switching I-V$_{\rm~C}$ characteristics; (IV) the repeatability test for the complementary switching; (V) the diagram of RL unit through programmable signal routing; (VI) the circuit symbol of RL and the corresponding truth table.


Contact and support