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SCIENCE CHINA Information Sciences, Volume 64 , Issue 6 : 162401(2021) https://doi.org/10.1007/s11432-020-3035-8

Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning

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  • ReceivedMar 14, 2020
  • AcceptedAug 17, 2020
  • PublishedMar 16, 2021

Abstract


Acknowledgment

This work was mainly supported by National Key Research and Development Program of China (Grant Nos. 2017YFA0205704, 2018YFB2200101), Natural Science Foundation of China (Grant Nos. 91964107, 61774133), Fundamental Research Funds for the Central Universities (Grant No. 2018XZZX003-02), partial supported by Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005), and Zhejiang University Education Foundation Global Partnership Fund.


Supplement

Figures S1–S3.


References

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  • Figure 1

    (Color online) Schematic illustrations of (a) a biological synapse and (b) an artificial Si/P3HT-based synaptic transistor. Inset: optical microscope image of the device. (c) UV-visible absorption spectrum of P3HT. (d) Atomic force microscope (AFM) images of a P3HT thin film. Inset: the thickness of the P3HT thin film measured via AFM line profiling. (e) Output curves of a typical synaptic transistor. (f) Transfer curves of the synaptic transistor obtained at $V_{\rm~D}$ = 5 V in darkness and under optical illumination at ($\lambda$) 532 nm and a power density of 3.5 mW/cm$^2$.

  • Figure 2

    (Color online) (a) EPSC of a synaptic transistor induced by a single optical spike ($\lambda$ = 532 nm) at $V_{\rm~D}$ = 5 V and $V_{\rm~G}$ = 0 V. The power density and duration of the optical pulse were 3.5 mW/cm$^2$ and 200 ms, respectively. (b) Dependence of the EPSC$_{\rm~max}$ on optical pulse duration. (c) EPSC induced by two consecutive optical pulses separated by a 300 ms pulse interval ($\Delta~t$). (d) Dependence of the PPF index on $\Delta~t$. (e) EPSC induced by 10 consecutive optical pulses. (f) Dependence of A$_{10}$/A$_1$ on $V_{\rm~G}$ at $V_{\rm~D}$ = 5 V.

  • Figure 3

    (Color online) (a) EPSC induced by a positive electrical spike (0.1 V) and IPSC induced by a negative electrical spike ($-0.1$ V) applied to the Si back gate of a synaptic transistor for 200 ms ($V_{\rm~D}$ = 5 V). (b) Dependence of the EPSC$_{\rm~max}$ and IPSC$_{\rm~max}$ on electrical pulse duration. (c) PPFs of a synaptic transistor stimulated with two consecutive positive (0.1 V) or negative ($-0.1$ V) electrical pulses ($\Delta~t$ = 200 ms). (d) Dependence of the PPF index on the $\Delta~t$ of electrical stimulation. (e) EPSC induced by consecutive positive (0.1 V) electrical pulses with durations of 500 ms, where pulse quantity $i$ = 5, 10, and 15. (f) EPSC induced by 10 positive (0.1 V) electrical pulses of 500 ms each at frequencies of 0.67, 1, and 1.67 Hz.

  • Figure 4

    (Color online) (a) Schematic illustration of spatiotemporal synaptic integration. The optical and electrical pulses correspond to visual presynaptic neuron and olfactory presynaptic neuron stimulation, respectively. The power density and duration of the optical pulse are 1.5 W/cm$^2$ and 200 ms, respectively. The electrical pulse has a voltage of 0.5 V and a duration of 200 ms. (b) EPSC with intervals ($\Delta~T$) of $-1$ s, $-0.2$ s, 0 s, and 1 s between visual and olfactory stimulation. (c) Dependence of perception (EPSC$_{\rm~max}$) on $\Delta~T$.