SCIENCE CHINA Information Sciences, Volume 62 , Issue 12 : 229401(2019) https://doi.org/10.1007/s11432-019-9894-0

Investigation of NbO$_{\boldsymbol~x}$-based volatile switching device with self-rectifying characteristics

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  • ReceivedMar 18, 2019
  • AcceptedMay 10, 2019
  • PublishedNov 8, 2019


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61834001, 61574007, 61421005) and 111 Project (Grant No. B18001).


Appendix A.


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  • Figure 1

    (Color online) (a) DC sweeping curves of fifteen Au/NbO$_x$/Pd devices. The inset includes a schematic of the device structure. (b) The positive bias curves of the device under heating test ranging from room temperature to 120$^{\circ}$C. (c) is extracted from several devices and a current versus reciprocal temperature is plotted. (d) The band diagrams helps to illustrate the conduction mechanisms of the device. Natural logarithm of voltage versus natural logarithm of current for SCLC fitting of negative bias region (e) and positive bias region (f). In (e) and (f), grey dashed lines present curves in linear region. Red dashed lines present curves obeying child's law in SCLC. The linear region, trap-filled-limited region and trap-free region are divided by vertical dotted lines. (g) An example shows the applied pulse waveform, the current curve and the delta current from two sequential pulses. (h) The color contour map summarizes the results of the pulse test of volatility.