SCIENCE CHINA Information Sciences, Volume 62 , Issue 8 : 089401(2019) https://doi.org/10.1007/s11432-019-9885-7

Deep insight into the voltage amplification effect from ferroelectric negative capacitance

More info
  • ReceivedMar 18, 2019
  • AcceptedApr 23, 2019
  • PublishedJul 11, 2019


There is no abstract available for this article.


This work was partly supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61851401, 61421005, 61822401), National Science and Technology Major Project (Grant No. 2017ZX02 315001-004), and Programme of Introducing Talents of Discipline to Universities (111 Project) (Grant No. B18001).


[1] Sze S M, Ng K K. Physics of Semiconductor Devices. Hoboken: John wiley sons, 2006. Google Scholar

[2] Liu J, Zhao Y, Wang L. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci China Inf Sci, 2017, 60: 120405 CrossRef Google Scholar

[3] Salahuddin S, Datta S. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices. Nano Lett, 2008, 8: 405-410 CrossRef PubMed ADS Google Scholar

[4] Obradovic B, Rakshit T, Hatcher R, et al. Ferroelectric switching delay as cause of negative capacitance and the implications to NCFETs. In: Proceedings of IEEE Symposium on VLSI Technology, 2018. 51--52. Google Scholar

[5] Wang H M, Yang M X, Huang Q Q, et al. New insights into the physical origin of negative capacitance and hysteresis in NCFETs. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018. Google Scholar

[6] Xu Y, Bi J, Xu G. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60: 120401 CrossRef Google Scholar

[7] B?scke T S, Müller J, Br?uhaus D. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99: 102903 CrossRef ADS Google Scholar

[8] Ishibashi Y, Takagi Y. Note on Ferroelectric Domain Switching. J Phys Soc Jpn, 1971, 31: 506-510 CrossRef ADS Google Scholar

[9] Merz W J. Switching Time in Ferroelectric BaTiO$_{3}$ and Its Dependence on Crystal Thickness. J Appl Phys, 1956, 27: 938-943 CrossRef ADS Google Scholar

  • Figure 1

    (Color online) (a) TEM image of capacitor series structure in this work and XRD of HfZrO$_{2}$; (b) measured $V_{\rm~int}$ versus $V_{G}$ in the capacitor series structure; (c) different dynamic polarization matching situations and corresponding $A_{V}$ (inset) for different sweeping rate; (d) $A_{V}$ for different thickness of oxide $T_{\rm~ox}$ and remanent polarization $P_{r}$.