SCIENCE CHINA Information Sciences, Volume 63 , Issue 2 : 129402(2020) https://doi.org/10.1007/s11432-019-9874-9

A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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  • ReceivedMar 18, 2019
  • AcceptedApr 28, 2019
  • PublishedJan 16, 2020


There is no abstract available for this article.


This work was partly supported by National Science and Technology Major Project (Grant No. 2017ZX02315001-004), National Natural Science Foundation of China (Grant Nos. 61851401, 61421005, 61822401, 61604006), and the 111 Project (Grant No. B18001).


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  • Figure 1

    (Color online) (a) The schematic view of the proposed JHL-TFET, the sectional view of the proposed device perpendicular to the channel ($AA'$) direction, the section view of the proposed device along channel ($BB'$) direction; protectłinebreak (b) the cross-sectional schematic of tunneling components in source region along $AA'$ direction in Figure 1(a), and simulated energy band along tunneling direction for BTBT$_{\rm~upper}$ and BTBT$_{\rm~underlying}$ of Si-Ge JHL-TFET when $V_{\rm~GT}$ = 0.01 and 0.3 V; (c) simulated surface energy bands of traditional Si TFET and energy band for BTBT$_{\rm~upper}$ of the Si-Ge JHL-TFET for off-state and $V_{\rm~GT}$ = 0.01 V; (d) simulated $G_{\rm~BTBT}$ in source region of Si-Ge JHL-TFET for $V_{\rm~GT}$ = 0.01 and protectłinebreak 0.3 V; (e) simulated transfer curves and SS of Si-Ge JHL-TFET and traditional Si TFET of the same footprint.