SCIENCE CHINA Information Sciences, Volume 63 , Issue 6 : 169401(2020) https://doi.org/10.1007/s11432-019-9842-3

A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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  • ReceivedFeb 25, 2019
  • AcceptedMar 25, 2019
  • PublishedFeb 12, 2020


There is no abstract available for this article.


This work was partly supported by National Key Research and Development Plan of China (Grant No. 2016YFA0200504), National Natural Science Foundation of China (Grant No. 61421005) and 111 Project (Grant No. B18001).


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  • Figure 1

    (Color online) (a) SEM image of our fabricated selective-assembling PSNFET; (b) the cross-sectional schematics of PSNFET along (left) and perpendicular (right) to nanowire channel with TPPS selectively assembled; (c) electrical program and erase characteristics of the SA PSNFET assembled with 1 and 10 $\mu$M TPPS (left), the bare SA PSNFET (middle) and the control sample (right); (d) the light programming and electrical erasing speed of the novel SA PSNFET with 1 $\mu$M TPPS functionalization (left and middle). The retention of light programmed SA PSNFET with 100 nm width and 1 $\mu$M TPPS (right).