SCIENCE CHINA Information Sciences, Volume 63 , Issue 2 : 122401(2020) https://doi.org/10.1007/s11432-019-9836-9

Vertical SnS$_{\boldsymbol~2}$/Si heterostructure for tunnel diodes

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  • ReceivedJan 23, 2019
  • AcceptedMar 15, 2019
  • PublishedSep 16, 2019



This work was partly supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61851401, 61822401, 61604006) and the 111 Project (Grant No. B18001).


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  • Figure 1

    (Color online) (a) Schematic view of the vertical 2D/3D tunnel diode. Vertical tunneling occurs across the overlap region between the 2D material and the 3D material. (b) Top view of the vertical 2D/3D tunnel diode.

  • Figure 2

    (Color online) The band diagram of the N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The bandgaps and electronic affinities of Si and SnS$_2$; (b) the equilibrium state; (c) the working state-reverse bias region.

  • Figure 3

    (Color online) The details of the process to fabricate the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The original Si substrate; (b) ion implantation with BF$_2$$^+$; (c) highly p-doped Si; (d) dry etching to form trenches; (e) CVD of SiO$_2$; (f) CMP of SiO$_2$; (g) HF treatment to remove the residual and native oxide; (h) transfer of SnS$_2$ sheet; (i) formation of contacts.

  • Figure 4

    (Color online) (a) The optical microscope image of the fabricated vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode; protectłinebreak (b) AFM image of fabricated vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode; (c) Raman characterization of the SnS$_2$ sheet in the tunnel diode.

  • Figure 5

    (Color online) The electric characteristics of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) Linear and (b) log current-voltage characteristics.

  • Figure 6

    (Color online) The NDR characteristic of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The band diagram in the small forward bias region; (b) the band diagram in the large forward bias region.

  • Figure 7

    (Color online) The temperature characteristic of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode.