This work was partly supported by National Natural Science Foundation of China (Grant Nos. 61421005, 61851401, 61822401, 61604006) and the 111 Project (Grant No. B18001).
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Figure 1
(Color online) (a) Schematic view of the vertical 2D/3D tunnel diode. Vertical tunneling occurs across the overlap region between the 2D material and the 3D material. (b) Top view of the vertical 2D/3D tunnel diode.
Figure 2
(Color online) The band diagram of the N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The bandgaps and electronic affinities of Si and SnS$_2$; (b) the equilibrium state; (c) the working state-reverse bias region.
Figure 3
(Color online) The details of the process to fabricate the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The original Si substrate; (b) ion implantation with BF$_2$$^+$; (c) highly p-doped Si; (d) dry etching to form trenches; (e) CVD of SiO$_2$; (f) CMP of SiO$_2$; (g) HF treatment to remove the residual and native oxide; (h) transfer of SnS$_2$ sheet; (i) formation of contacts.
Figure 4
(Color online) (a) The optical microscope image of the fabricated vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode; protectłinebreak (b) AFM image of fabricated vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode; (c) Raman characterization of the SnS$_2$ sheet in the tunnel diode.
Figure 5
(Color online) The electric characteristics of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) Linear and (b) log current-voltage characteristics.
Figure 6
(Color online) The NDR characteristic of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode. (a) The band diagram in the small forward bias region; (b) the band diagram in the large forward bias region.
Figure 7
(Color online) The temperature characteristic of the vertical N$^+$ SnS$_2$/P$^+$ Si tunnel diode.
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