SCIENCE CHINA Information Sciences, Volume 63 , Issue 12 : 229402(2020) https://doi.org/10.1007/s11432-019-2732-1

A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

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  • ReceivedJul 2, 2019
  • AcceptedNov 8, 2019
  • PublishedSep 1, 2020


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61701114, 61941103), National Key Research and Development Program (Grant No. 2018YFB1801602), Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811), and China Scholarship Council (CSC).


Appendixes A–E.


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  • Figure 1

    (Color online) (a) Block diagram of the D-Band signal source; (b) schematic of the E-Band tripler; (c) schematic of the D-Band doubler; (d) simulated output power of the D-Band doubler versus input power and base bias voltage at protectłinebreak 78 GHz; (e) die micrograph of the signal source; (f) measured output frequency and phase noise vs. the tuning voltage $V_{\rm~tune}$ of VCO; (g) measured output power and harmonic suppression vs. the tuning voltage $V_{\rm~tune}$ of VCO.