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SCIENCE CHINA Information Sciences, Volume 63 , Issue 12 : 229403(2020) https://doi.org/10.1007/s11432-019-2716-5

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors

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  • ReceivedAug 11, 2019
  • AcceptedNov 25, 2019
  • PublishedNov 2, 2020

Abstract

There is no abstract available for this article.


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 2019B010145001, 616340084, 61821091, 61888102).


References

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  • Figure 1

    (Color online) Simulation results of SOI DG-FeTFET at $V_{\rm~g}=0$ V and $V_{\rm~d}=0.5$ V. (a) Cross-section schematic of DG-FeTFET; (b) physical parameters for TCAD simulation; (c) single event transient drain current with respect to various LETs; (d) time variations of collected charge with various LETs; (e) bipolar amplification as function of LETs; (f) horizontal distance variations of electrostatic potential with various time for DG-FeTFET at $V_{\rm~d}=0.5$ V, at 2 nm below the lateral oxide/Si interface; (g) transient current induced by horizontal incidence; (h) transient current induced by vertical incidence; (i) collected charges for different strike positions.