SCIENCE CHINA Information Sciences, Volume 62 , Issue 12 : 220404(2019) https://doi.org/10.1007/s11432-019-1474-3

Nonvolatile memristor based on heterostructure of 2D room-temperatureferroelectric $\alpha$-In$_{2}$Se$_{3}$ and WSe$_{2}$

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  • ReceivedJun 2, 2019
  • AcceptedJul 24, 2019
  • PublishedOct 30, 2019



This work was supported by National Natural Science Foundation of China (Grant Nos. 61622406, 61571415), National Key Research and Development Program of China (Grant Nos. 2017YFA0207500, 2016YFB0700700), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000).


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  • Figure 1

    (Color online) Basic structure and characterization of ferroelectric $\alpha~$-In$_{2}$Se$_{3}$. (a) Atomic structure of layered $\alpha~$-In$_{2}$Se$_{3}$ crystals; (b) Raman spectra of $\sim~$10 nm $\alpha~$-In$_{2}$Se$_{3}$ nanosheet; (c) high-resolution TEM image of exfoliated In$_{2}$Se$_{3}$; (d) SAED patterns of the $\alpha~$-In$_{2}$Se$_{3}$ nanoflake corresponding to (c).

  • Figure 2

    (Color online) PFM investigation of as-grown $\alpha $-In$_{2}$Se$_{3}$ on a Pt/Si substrate. (a) AFM image of typical thin flakes with thicknesses between 5 and 70 nm. (b) Corresponding PFM phase image. Polarization reversal under external electrical field. (c) On-field PFM amplitude and PFM phase hysteresis loops on a 20 nm thick flake. (d) Corresponding PFM phase image of a $\sim~$15 layer In$_{2}$Se$_{3}$ nanosheet, two rectangular strip domains are first written with $-$4 V on the sample, then the middle square domain is written with +5V. The clear phase change proves that the ferroelectric domain can be flipped by the applied voltage.

  • Figure 3

    (Color online) (a) Optical and AFM images of the $\alpha $-In$_{2}$Se$_{3}$/WSe$_{2}$ vertical heterostructure device; (b) schematic diagram of the corresponding device; (c), (d) $I$-$V$ curves for a ferroelectric memorizer with switchable rectifying behavior.

  • Figure 4

    (Color online) (a) $I$-$V$ curves measured under high DC bias, showing hysteresis characteristics. The calculated band alignment of the $\alpha~$-In$_{2}$Se$_{3}$/WSe$_{2}$ heterostructure after being polarized up (b) and polarized down (c), respectively.