SCIENCE CHINA Information Sciences, Volume 62 , Issue 12 : 222401(2019) https://doi.org/10.1007/s11432-018-9799-1

Total ionizing dose effects on graphene-based charge-trapping memory

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  • ReceivedDec 30, 2018
  • AcceptedJan 31, 2019
  • PublishedNov 7, 2019



This work was supported by National Natural Science Foundation of China (Grant Nos. 61704188, 616340084), Youth Innovation Promotion Association CAS (Grant No. 2014101), and International Cooperation Project of CAS, Austrian-Chinese Cooperative RD Projects (Grant No. 172511KYSB20150006).


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  • Figure 1

    (Color online) Schematic illustration of the structure of the GCTM capacitor.

  • Figure 2

    (Color online) $C-V$ hysteresis characteristics of the fabricated GCTM devices and the DC memory window after irradiation. (a) $\pm$10 V sweep before irradiation; (b) $\pm$15 V sweep before irradiation; (c) $\pm$20 V sweep before irradiation; (d) DC memory as a function of total dose.

  • Figure 3

    (Color online) Representative P/E characteristics of the GCTM device before and after radiation. (a) Characteristics before irradiation; (b) post-radiation evaluation for the device in ERS state; (c) post-radiation evaluation for the device in PGM state; (d) flat band voltage shifts with radiation dose.

  • Figure 4

    (Color online) Leakage current-voltage characteristics of GCTM capacitors before and after irradiation.