SCIENCE CHINA Information Sciences, Volume 62 , Issue 6 : 069407(2019) https://doi.org/10.1007/s11432-018-9791-2

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

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  • ReceivedSep 9, 2018
  • AcceptedFeb 22, 2019
  • PublishedApr 4, 2019


There is no abstract available for this article.


This work was supported by National Science and Technology Major Project (Grant No. 2016ZX02301003), National Natural Science Foundation of China (Grant Nos. 61574056, 61704056), Shanghai Sailing Program (Grant No. YF1404700), and Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800).


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  • Figure 1

    (a) Structures of the SELBOX and FDSOI MOSFETs; (b) thermal and DC performance in different devices; (c) electrostatic potential distributions on the top and bottom surfaces in different devices in the saturation state; and protectłinebreak (d) electrostatic potential distributions on the top and bottom surfaces in different devices in linear and saturation states.