There is no abstract available for this article.
This work was supported by National Natural Science Foundation of China (Grant No. 61274085), and Science and Technology Planning Project of Guangdong Province (Grant No. 2015B090909001).
Appendixes A–C.
[1] Kim D S, Kwon O K. A Small-Area and Low-Power Scan Driver Using a Coplanar a-IGZO Thin-Film Transistor With a Dual-Gate for Liquid Crystal Displays. IEEE Electron Device Lett, 2017, 38: 195-198 CrossRef ADS Google Scholar
[2] Jeon C H, Um J G, Mativenga M. Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs. IEEE Electron Device Lett, 2016, 37: 1450-1453 CrossRef ADS Google Scholar
[3] Baek G, Abe K, Kuo A. Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors and Its Application to AM-OLEDs. IEEE Trans Electron Devices, 2011, 58: 4344-4353 CrossRef ADS Google Scholar
[4] Baek G, Kanicki J. Modeling of current-voltage characteristics for double-gate a-IGZO TFTs and its application to AMLCDs. J Soc Inf Display, 2012, 20: 237-244 CrossRef Google Scholar
[5] Qin T, Huang S X, Liao C W, et al. Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate (in Chinese). Acta Phys Sin, 2017, 66: 097101. Google Scholar
[6] Cai M, Yao R. A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors. Sci China Inf Sci, 2018, 61: 022401 CrossRef Google Scholar
[7] Xuejie Shi , Man Wong . Analytical solutions to the one-dimensional oxide-silicon-oxide system. IEEE Trans Electron Devices, 2003, 50: 1793-1800 CrossRef ADS Google Scholar
[8] Pierret R F, Shields J A. Simplified long-channel MOSFET theory. Solid-State Electron, 1983, 26: 143-147 CrossRef ADS Google Scholar
Figure 1
(Color online) Band diagrams in the vertical ($\textit{x}\rm{-}$) direction to the channel for (a) the F0 case andprotect łinebreak (b) the P0 case.