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SCIENCE CHINA Information Sciences, Volume 62 , Issue 6 : 062403(2019) https://doi.org/10.1007/s11432-018-9503-9

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

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  • ReceivedFeb 9, 2018
  • AcceptedJun 21, 2018
  • PublishedJan 16, 2019

Abstract


Acknowledgment

This work was supported in part by National Natural Science Foundation of China (Grant Nos. 51677021, 61234006), National Defense Science and Technology Project Foundation of China (Grant No. 1100395), and Fundamental Research Funds for the Central Universities (Grant No. ZYGX2014Z006).


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