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SCIENCE CHINA Information Sciences, Volume 62 , Issue 4 : 042401(2019) https://doi.org/10.1007/s11432-018-9490-1

Modeling of program Vth distribution for 3-D TLC NAND flash memory

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  • ReceivedMar 8, 2018
  • AcceptedMay 29, 2018
  • PublishedFeb 21, 2019

Abstract


Acknowledgment

This work was supported by National Key Research and Development Plan (Grant No. 2016YFA02- 02101); Huawei Technologies Co., Ltd., Hangzhou, China; National Natural Science Foundation of China (Grant No. 61421005); and National High-Tech R$\&$D Program (863 Program) (Grant No. 2015AA016501).


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