SCIENCE CHINA Information Sciences, Volume 61 , Issue 12 : 129401(2018) https://doi.org/10.1007/s11432-017-9443-1

A W-band wideband power amplifier using out-of-phase divider in 0.13-$\mu$m SiGe BiCMOS

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  • ReceivedAug 3, 2017
  • AcceptedMay 4, 2018
  • PublishedOct 22, 2018


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61601121), and Nature Science Foundation of Jiangsu Province (Grant No. BK20150638). The authors would like to thank the Milliway Microelectronics Corporation, Nanjing, China for providing the chip fabrication.


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  • Figure 1

    (Color online) (a) Structure of the out-of-phase divider with phase inverter. Dimensions: $\textit{l}$ = 300, $\textit{l}_1$ = 68, $\textit{l}_2$ = 320, $\textit{w}$ = 19, $\textit{w}_1$ = 7, $\textit{w}_2$ = 15, $\textit{d}$ = 70, $\textit{s}$ = 2, units: $\mu$m; (b) microphotograph of the amplifier; (c) simulated and measured S-parameters of the amplifier, under bias conditions of $V_{B}$ = 0.9 V, $V_{B2}$ = 1.9 V, $V_{C1}$ = $V_{C2}$ = 3 V, and $I_{C}$ = 64 mA; (d) simulated and measured P1dB, Psat and PAE of the amplifier.