This work was supported by Strategic Priority Research Program of Chinese Academy of Science (Grant No. XDA15015000), National Natural Science Foundational of China (Grant No. 11690043), and Foundation of State Key Laboratory of China (Grant No. SKLIPR1610).
[1] Zhou Y F, Cao Z X, Qin Q. A high speed 1000 fps CMOS image sensor with low noise global shutter pixels. Sci China Inf Sci, 2014, 57: 042405 CrossRef Google Scholar
[2] Zhou Y F, Cao Z X, Han Y. A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor. Sci China Inf Sci, 2015, 58: 042406 CrossRef Google Scholar
[3] Chen Z, Di S, Cao Z X. A 256256 time-of-flight image sensor based on center-tap demodulation pixel structure. Sci China Inf Sci, 2016, 59: 042409 CrossRef Google Scholar
[4] Xue Y Y, Wang Z J, Liu M B. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci China Inf Sci, 2017, 60: 120402 CrossRef Google Scholar
[5] Chen W, Yang H L, Guo X Q. The research status and challenge of space radiation physics and application (in Chinese). Chin Sci Bull, 2017, 62: 978-989 CrossRef Google Scholar
[6] Goiffon V, Virmontois C, Magnan P. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. IEEE Trans Nucl Sci, 2012, 59: 918-926 CrossRef ADS Google Scholar
[7] Goiffon V, Estribeau M, Magnan P. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. IEEE Trans Electron Dev, 2009, 56: 2594-2601 CrossRef ADS Google Scholar
[8] Virmontois C, Goiffon V, Magnan P. Similarities between proton and neutron induced dark current distribution in CMOS image sensors. IEEE Trans Nucl Sci, 2012, 59: 927-936 CrossRef ADS Google Scholar
[9] Virmontois C, Goiffon V, Magnan P. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. IEEE Trans Nucl Sci, 2010, 57: 3101-3108 CrossRef ADS Google Scholar
[10] Wang Z J, Liu C J, Ma Y. Degradation of CMOS APS image sensors induced by total ionizing dose radiation at different dose rates and biased conditions. IEEE Trans Nucl Sci, 2015, 62: 527-533 CrossRef ADS Google Scholar
[11] Wang Z J, Ma W Y, Liu J. Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates. Nucl Instrum Meth Phys Res A, 2016, 820: 89-94 CrossRef ADS Google Scholar
[12] Allison J, Amako K, Apostolakis J. Geant4 developments and applications. IEEE Trans Nucl Sci, 2006, 53: 270-278 CrossRef ADS Google Scholar
[13] European Machine Vision Association (EMVA). EMVA Stand 1288. 2012. Google Scholar
[14] Srour J R, Palko J W. Displacement damage effects in irradiated semiconductor devices. IEEE Trans Nucl Sci, 2013, 60: 1740-1766 CrossRef ADS Google Scholar
[15] Wang Z J, Huang S Y, Liu M B. Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor. AIP Adv, 2014, 4: 077108 CrossRef ADS Google Scholar
[16] Srour J R, Lo D H. Universal damage factor for radiation-induced dark current in silicon devices. IEEE Trans Nucl Sci, 2000, 47: 2451-2459 CrossRef ADS Google Scholar
Figure 1
(Color online) Schematic of global modeling project.
Figure 2
(Color online) Cross section of neutron for Si.
Figure 3
(Color online) Mean dark signal of CIS versus integration time pre- and post- radiation.
Figure 4
(Color online) Mean dark signal versus neutron radiation fluence at different integration times.
Figure 5
(Color online) Displacement damage dose ($D_{d}$) and mean dark signal increase versus neutron radiation fluence.
Figure 6
Captured raw images of CIS before and after neutron radiation when the integration time is approximately 10.25 ms. (a) Before radiation; (b) neutron radiation fluence: 1$\times~$10$^{11}$ n/cm$^{2}$; (c) neutron radiation fluence: 2$\times~$10$^{11}$ n/cm$^{2}$.
Figure 7
Modeled raw images of CIS after neutron radiation when the integration time is approximately 10.25 ms. Fluence: (a) 5$\times~$10$^{9}$ n/cm$^{2}$; (b) 1$\times~$10$^{10}$ n/cm$^{2}$; (c) 5$\times~$10$^{10}$ n/cm$^{2}$; (d) 1$\times~$10$^{11}$ n/cm$^{2}$; (e) 2$\times~$10$^{11}$ n/cm$^{2}$; (f) 3$\times~$10$^{11}$ n/cm$^{2}$.protect łinebreak
Figure 8
(Color online) Normalized number of nuclear interactions in 100$\times~$100 pixels CIS versus neutron radiation fluence.
Figure 9
(Color online) DSNU and square of DSNU increase versus neutron radiation fluence.
Figure 10
(Color online) The 3D surface plot of experimental raw images. (a) Before radiation; (b) neutron radiation fluence: 1$\times~$10$^{11}$ n/cm$^{2}$; (c) neutron radiation fluence: 2$\times$ 10$^{11}$ n/cm$^{2}$.
Figure 11
(Color online) Dark signal increase distributions in the CIS after neutron irradiations. (a) Fluence: 1$\times~$protect łinebreak 10$^{11}$ n/cm$^{2}$; (b) fluence: 2$\times~$10$^{11}$ n/cm$^{2}$.
Figure 12
(Color online) Modeled dark signal increase distributions of CIS after neutron radiation at several radiation fluences.
Download PDF
