SCIENCE CHINA Information Sciences, Volume 60 , Issue 12 : 120403(2017) https://doi.org/10.1007/s11432-017-9248-2

1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells

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  • ReceivedJul 10, 2017
  • AcceptedSep 18, 2017
  • PublishedNov 3, 2017


There is no abstract available for this article.


This work was supported by National Natural Science Foundation of China (Grant Nos. 61534008, 11675259, 11275262, 61640401), 1000-Talent Project of Xinjiang Technical Institute of Physical & Chemical, Chinese Academy of Sciences (Grant No. Y52H121101).


[1] Green M A, Emery K A, Hishikawa Y, et al. Solar cell efficiency tables (version 45). Prog Photovolt Res Appl, 2015, 23: 1–9. Google Scholar

[2] Stan M A, Aiken D, Sharps P R, et al. The development of $>$ 28. Google Scholar

[3] Cornfeld A B, Aiken D, Cho B, et al. Development of a four sub-cell inverted metamorphic multi-junction (IMM) highly efficient AM0 solar cell. In: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, 2010. Google Scholar

[4] Dai P, Ji L, Tan M, et al. Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE. Sol Energ Mater Sol Cells, 2017, 171: 118–122. Google Scholar

[5] Maximenko S I, Messenger S R, Hoheisel R, et al. Characterization of high fluence irradiations on advanced triple junction solar cells. In: Proceedings of the 39th IEEE Photovoltaic Specialists Conference, Tampa, 2013. 2797-2800. Google Scholar

[6] Sze S M, Ng K K. Physics of Semiconductor Devices. 3rd ed. Hoboken: John Wiley $\&$ Sons, 2006. 728--729. Google Scholar