SCIENCE CHINA Information Sciences, Volume 61 , Issue 6 : 069402(2018) https://doi.org/10.1007/s11432-017-9145-2

## A study of residual characteristics in floating gate transistors

• AcceptedJun 12, 2017
• PublishedSep 14, 2017
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### Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).

• Figure 1

(a) Structure of the floating gate transistor. (b) Illustration of the number of P/E sequences at 1-10 P/E cycles. (c) The Id-Vg characteristics of the floating gate transistor (i) before it is first programmed; (ii) after it is first programmed; (iii) after it is first erased for previously programmed cell. (d) The $V_{\rm th}$ after overwriting operations when 1 initial P/E cycle is performed.

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