SCIENCE CHINA Information Sciences, Volume 60 , Issue 7 : 072401(2017) https://doi.org/10.1007/s11432-016-0346-1

## Comparison of single-event upset generated by heavy ion and pulsed laser

• AcceptedNov 23, 2016
• PublishedJun 13, 2017
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### Acknowledgment

This work was supported by National Natural Science Foundation of China (Grant Nos. 61376109, 61434007). The authors would like to thank the HI-13 teams, the HIRFL teams and the SEEL teams for heavy ion and pulsed laser experiment supports.

• Figure 1

The schematics of (a) the conventional D flip-flop and (b) the conventional DICE flip-flop.

• Figure 2

The schematics of (a) the test circuit and (b) the whole layout.

• Figure 3

The structure of the heavy ion experiment setup.

• Figure 4

The measured SEU cross sections with (a) solid 0 and (b) solid 1 dynamic test mode in Test-A.

• Figure 5

The measured SEU cross sections with (a) solid 0 and (b) solid 1 dynamic test mode in Test-B.

• Figure 6

The TCAD models of the D and DICE flip-flops.

• Figure 7

The simulated SEU percentage of the D and DICE flip-flops with different beam spot sizes. (a) The incident equivalent LET is 20 ${\rm MeV\cdot cm^2/mg}$; (b) the incident equivalent LET is 100 ${\rm MeV\cdot cm^2/mg}$.

• Figure 8

The simulated SEU percentage of the D and DICE flip-flops with the variation of the equivalent LET. (a) The incident equivalent LET is 20 ${\rm MeV\cdot cm^2/mg}$; (b) the incident equivalent LET is 100 ${\rm MeV\cdot cm^2/mg}$.

• Figure 9

The simulated collected charge with different beam spot sizes.

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