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SCIENCE CHINA Information Sciences, Volume 59 , Issue 4 : 042410(2016) https://doi.org/10.1007/s11432-015-5454-z

Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer

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  • ReceivedAug 6, 2015
  • AcceptedSep 15, 2015
  • PublishedFeb 17, 2016

Abstract


References

[1] Paul C T, Ritu T. IEEE Trans Electron Dev, 1994, 41: 1481-1483 CrossRef Google Scholar

[2] Ambacher O, Foutz B, Smart J, et al. J Appl Phys, 2000, 87: 334-343 CrossRef Google Scholar

[3] Wataru S, Ichiro O, Tsuneo O, et al. Solid-State Electron, 2004, 48: 1555-1562 CrossRef Google Scholar

[4] Duan B X, Yang Y T. Sci China Inf Sci, 2012, 55: 473-479 CrossRef Google Scholar

[5] Wei K, Liu X Y, He Z J, et al. J Semiconduct, 2008, 57: 1492-1496 Google Scholar

[6] Eldad B T, Frank B, Oliver H, et al. IEEE Trans Electron Dev, 2010, 57: 3050-3058 Google Scholar

[7] Eldad B T, Oliver H, Frank B, et al. IEEE Trans Electron Dev, 2008, 55: 3354-3359 CrossRef Google Scholar

[8] Zhao Z Q, Zhao Z Y, Luo Q, et al. Electron Lett, 2013, 49: 1638-1640 CrossRef Google Scholar

[9] Zhou Q, Chen W J, Liu S H, et al. IEEE Trans Electron Dev, 2013, 60: 1075-1081 CrossRef Google Scholar

[10] Klein P B, Binari S C, Ikossi K, et al. Appl Phys Lett, 2001, 79: 3527-3529 CrossRef Google Scholar

[11] Cai Y, Zhou Y G, Chen K J, et al. IEEE Electron Dev Lett, 2005, 26: 435-437 CrossRef Google Scholar

[12] Chen K J, Yuan L, Wang M J, et al. Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology. In: Electron Devices Meeting (IEDM), San Francisco, 2010. 465--468. Google Scholar

[13] Song D, Liu J, Cheng Z, et al. IEEE Electron Dev Lett, 2007, 28: 189-191 CrossRef Google Scholar

[14] Young S K, Lim J Y, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 251--255. Google Scholar

[15] Wang M J, Chen K J. IEEE Trans Electron Dev, 2011, 58: 460-465 CrossRef Google Scholar

[16] Uren M J, Nash K J, Balmer R S, et al. IEEE Trans Electron Dev, 2006, 53: 395-398 CrossRef Google Scholar

[17] Stephan S, Axel E, Tommaso C, et al. TCAD methodology for simulation of GaN-HEMT power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hawaii, 2014. 257--260. Google Scholar

[18] Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley and Sons, Inc. 2001. 1--30. Google Scholar

[19] Huang W, Chow T P, Niiyama Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV. In: Proceedings of the 20rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Orlando, 2008. 291--294. Google Scholar

[20] Yuan L, Chen H W, Zhou Q, et al. A novel normally-off GaN power tunnel junction FET. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 276--279. Google Scholar

[21] Park B R, Lee J G, Choi W, et al. IEEE Electron Dev Lett, 2013, 34: 354-356 CrossRef Google Scholar

[22] Hilt O, Knauer A, Brunner F, et al. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hiroshima, 2011. 347--350. Google Scholar