References
[1]
Paul
C T,
Ritu
T.
IEEE Trans Electron Dev,
1994, 41: 1481-1483
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Paul C T&author=Ritu T&publication_year=1994&journal=IEEE Trans Electron Dev&volume=41&pages=1481-1483
[2]
Ambacher
O,
Foutz
B,
Smart
J, et al.
J Appl Phys,
2000, 87: 334-343
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Ambacher O&author=Foutz B&author=Smart J&publication_year=2000&journal=J Appl Phys&volume=87&pages=334-343
[3]
Wataru
S,
Ichiro
O,
Tsuneo
O, et al.
Solid-State Electron,
2004, 48: 1555-1562
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Wataru S&author=Ichiro O&author=Tsuneo O&publication_year=2004&journal=Solid-State Electron&volume=48&pages=1555-1562
[4]
Duan
B X,
Yang
Y T.
Sci China Inf Sci,
2012, 55: 473-479
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Duan B X&author=Yang Y T&publication_year=2012&journal=Sci China Inf Sci&volume=55&pages=473-479
[5]
Wei
K,
Liu
X Y,
He
Z J, et al.
J Semiconduct,
2008, 57: 1492-1496
Google Scholar
http://scholar.google.com/scholar_lookup?author=Wei K&author=Liu X Y&author=He Z J&publication_year=2008&journal=J Semiconduct&volume=57&pages=1492-1496
[6]
Eldad
B T,
Frank
B,
Oliver
H, et al.
IEEE Trans Electron Dev,
2010, 57: 3050-3058
Google Scholar
http://scholar.google.com/scholar_lookup?author=Eldad B T&author=Frank B&author=Oliver H&publication_year=2010&journal=IEEE Trans Electron Dev&volume=57&pages=3050-3058
[7]
Eldad
B T,
Oliver
H,
Frank
B, et al.
IEEE Trans Electron Dev,
2008, 55: 3354-3359
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Eldad B T&author=Oliver H&author=Frank B&publication_year=2008&journal=IEEE Trans Electron Dev&volume=55&pages=3354-3359
[8]
Zhao
Z Q,
Zhao
Z Y,
Luo
Q, et al.
Electron Lett,
2013, 49: 1638-1640
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Zhao Z Q&author=Zhao Z Y&author=Luo Q&publication_year=2013&journal=Electron Lett&volume=49&pages=1638-1640
[9]
Zhou
Q,
Chen
W J,
Liu
S H, et al.
IEEE Trans Electron Dev,
2013, 60: 1075-1081
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Zhou Q&author=Chen W J&author=Liu S H&publication_year=2013&journal=IEEE Trans Electron Dev&volume=60&pages=1075-1081
[10]
Klein
P B,
Binari
S C,
Ikossi
K, et al.
Appl Phys Lett,
2001, 79: 3527-3529
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Klein P B&author=Binari S C&author=Ikossi K&publication_year=2001&journal=Appl Phys Lett&volume=79&pages=3527-3529
[11]
Cai
Y,
Zhou
Y G,
Chen
K J, et al.
IEEE Electron Dev Lett,
2005, 26: 435-437
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Cai Y&author=Zhou Y G&author=Chen K J&publication_year=2005&journal=IEEE Electron Dev Lett&volume=26&pages=435-437
[12]
Chen K J, Yuan L, Wang M J, et al. Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology. In: Electron Devices Meeting (IEDM), San Francisco, 2010. 465--468.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Chen K J, Yuan L, Wang M J, et al. Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology. In: Electron Devices Meeting (IEDM), San Francisco, 2010. 465--468&
[13]
Song
D,
Liu
J,
Cheng
Z, et al.
IEEE Electron Dev Lett,
2007, 28: 189-191
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Song D&author=Liu J&author=Cheng Z&publication_year=2007&journal=IEEE Electron Dev Lett&volume=28&pages=189-191
[14]
Young S K, Lim J Y, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 251--255.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Young S K, Lim J Y, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 251--255&
[15]
Wang
M J,
Chen
K J.
IEEE Trans Electron Dev,
2011, 58: 460-465
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Wang M J&author=Chen K J&publication_year=2011&journal=IEEE Trans Electron Dev&volume=58&pages=460-465
[16]
Uren
M J,
Nash
K J,
Balmer
R S, et al.
IEEE Trans Electron Dev,
2006, 53: 395-398
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Uren M J&author=Nash K J&author=Balmer R S&publication_year=2006&journal=IEEE Trans Electron Dev&volume=53&pages=395-398
[17]
Stephan S, Axel E, Tommaso C, et al. TCAD methodology for simulation of GaN-HEMT power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hawaii, 2014. 257--260.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Stephan S, Axel E, Tommaso C, et al. TCAD methodology for simulation of GaN-HEMT power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hawaii, 2014. 257--260&
[18]
Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley and Sons, Inc. 2001. 1--30.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley and Sons, Inc. 2001. 1--30&
[19]
Huang W, Chow T P, Niiyama Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV. In: Proceedings of the 20rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Orlando, 2008. 291--294.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Huang W, Chow T P, Niiyama Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV. In: Proceedings of the 20rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Orlando, 2008. 291--294&
[20]
Yuan L, Chen H W, Zhou Q, et al. A novel normally-off GaN power tunnel junction FET. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 276--279.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Yuan L, Chen H W, Zhou Q, et al. A novel normally-off GaN power tunnel junction FET. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices and IC's (ISPSD), San Diego, 2011. 276--279&
[21]
Park
B R,
Lee
J G,
Choi
W, et al.
IEEE Electron Dev Lett,
2013, 34: 354-356
CrossRef
Google Scholar
http://scholar.google.com/scholar_lookup?author=Park B R&author=Lee J G&author=Choi W&publication_year=2013&journal=IEEE Electron Dev Lett&volume=34&pages=354-356
[22]
Hilt O, Knauer A, Brunner F, et al. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hiroshima, 2011. 347--350.
Google Scholar
http://scholar.google.com/scholar_lookup?title=Hilt O, Knauer A, Brunner F, et al. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices and IC's (ISPSD), Hiroshima, 2011. 347--350&