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A light-emitting electrochemical artificial synapse with dual output of photoelectric signals

Huaan Zeng, Qizhen Chen, Liuting Shan, Yujie Yan, Changsong Gao, Wenjie Lu, Huipeng Chen, Tailiang Guo

SCIENCE CHINA Materials 10.1007/s40843-021-2029-y

Dye-sensitized perovskite/organic semiconductor ternary transistors for artificial synapses

Xin Wang, Dandan Hao, Jia Huang

SCIENCE CHINA Materials 10.1007/s40843-021-1999-5

Memristor based on α-In₂Se₃ for emulating biological synaptic plasticity and learning behavior

Ying Zhao, Yifei Pei, Zichang Zhang, Xiaoyu Li, Jingjuan Wang, Lei Yan, Hui He, Zhenyu Zhou, Jianhui Zhao, Jingsheng Chen, Xiaobing Yan

SCIENCE CHINA Materials 65 (6), 1631-1638 (2022); 10.1007/s40843-021-1925-x

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

Yang Li, Cheng Zhang, Zhiming Shi, Chunlan Ma, Jun Wang, Qichun Zhang

SCIENCE CHINA Materials 10.1007/s40843-021-1771-5

Control of photocurrent and multi-state memory by polar order engineering in 2H-stacked α-In₂Se₃ ferroelectric

Baohua Lv, Wuhong Xue, Zhi Yan, Ruilong Yang, Hao Wu, Peng Wang, Yuying Zhang, Jiani Hou, Wenguang Zhu, Xiaohong Xu

SCIENCE CHINA Materials 65 (6), 1639-1645 (2022); 10.1007/s40843-021-1920-9

Electron configurations at 3d orbital of metal ion determining charge transition process in memory devices

Jiacong Guo, Yankun Zhang, Guofeng Tian, Deyang Ji, Shengli Qi, Dezhen Wu, Wenping Hu

SCIENCE CHINA Materials 64 (7), 1713-1722 (2021); 10.1007/s40843-020-1560-1

Low-power memristors based on layered 2D SnSe/graphene materials

Hong Wang, Tianqi Yu, Jianhui Zhao, Shufang Wang, Xiaobing Yan

SCIENCE CHINA Materials 64 (8), 1989-1996 (2021); 10.1007/s40843-020-1586-x

Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application

Jing Zhang, Tao Yang, Jingjuan Wang, Jianhui Zhao, Xiaobing Yan

SCIENCE CHINA Materials 64 (1), 179-188 (2021); 10.1007/s40843-020-1367-x

Hf_0.5Zr_0.5O₂-based ferroelectric memristor with multi-level storage potential and artificial synaptic plasticity

Tianqi Yu, Fuchao He, Jianhui Zhao, Zhenyu Zhou, Jingjing Chang, Jingsheng Chen, Xiaobing Yan

SCIENCE CHINA Materials 64 (3), 727-738 (2021); 10.1007/s40843-020-1444-1

Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing

Lingkai Li, Xiao-Lin Wang, Junxiang Pei, Wen-Jun Liu, Xiaohan Wu, David Wei Zhang, Shi-Jin Ding

SCIENCE CHINA Materials 64 (5), 1219-1229 (2021); 10.1007/s40843-020-1534-2

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

Dazheng Chen, Peng Yuan, Shenglei Zhao, Shuang Liu, Qian Xin, Xiufeng Song, Shiqi Yan, Yachao Zhang, He Xi, Weidong Zhu, Weihang Zhang, Jiaqi Zhang, Hong Zhou, Chunfu Zhang, Jincheng Zhang, Yue Hao

SCIENCE CHINA Materials 65 (3), 795-802 (2022); 10.1007/s40843-021-1838-3

Optical-switched proton logic gate: Indocyanine green decorated HSB-W5 MOFs nanosheets

Shuaikang Fan, Shilin Wang, Xiaobin Wang, Xinyi Wan, Zhou Fang, Xiaodong Pi, Zhizhen Ye, Xinsheng Peng

SCIENCE CHINA Materials 65 (4), 1076-1086 (2022); 10.1007/s40843-021-1806-1

A hippocampus-inspired illumination time-resolved device for neural coding

Caihong Li, Wen Du, Hezhuang Liu, Mao Yang, Hao Xu, Jiang Wu, Zhiming Wang

SCIENCE CHINA Materials 65 (4), 1087-1093 (2022); 10.1007/s40843-021-1828-5

CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Ying Zhang, Xiaolong Zhao, Xiaolan Ma, Yu Liu, Xuanze Zhou, Meiyun Zhang, Guangwei Xu, Shibing Long

SCIENCE CHINA Materials 65 (6), 1623-1630 (2022); 10.1007/s40843-021-1956-9

Artificial nociceptor based on TiO₂ nanosheet memristor

Jinling Lan, Gang Cao, Jingjuan Wang, Xiaobing Yan

SCIENCE CHINA Materials 64 (7), 1703-1712 (2021); 10.1007/s40843-020-1564-y

Facile fabrication of encryption composite materials with trilayer quasi-amorphous heterostructure

Fantao Meng, Malik Muhammad Umair, Shufen Zhang, Yao Meng, Bingtao Tang

SCIENCE CHINA Materials 64 (4), 909-919 (2021); 10.1007/s40843-020-1500-9

Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe

Xiaoting Wang, Fang Zhong, Jun Kang, Can Liu, Ming Lei, Longfei Pan, Hailu Wang, Fang Wang, Ziqi Zhou, Yu Cui, Kaihui Liu, Jianlu Wang, Guozhen Shen, Chongxin Shan, Jingbo Li, Weida Hu, Zhongming Wei

SCIENCE CHINA Materials 64 (5), 1230-1237 (2021); 10.1007/s40843-020-1535-9

The macroscopic quantum state of ion channels: A carrier of neural information

Bo Song, Lei Jiang

SCIENCE CHINA Materials 64 (10), 2572-2579 (2021); 10.1007/s40843-021-1644-6

Coexistence of large positive and negative magnetoresistance in Cr₂Si₂Te₆ ferromagnetic semiconductor

Zhou Li, Wei Bai, Yuliang Li, Yuanlong Li, Sheng Wang, Weihui Zhang, Jiyin Zhao, Zhe Sun, Chong Xiao, Yi Xie

SCIENCE CHINA Materials 65 (3), 780-787 (2022); 10.1007/s40843-021-1765-x

Ultrafast photoinduced strain in super-tetragonal PbTiO₃ ferroelectric films

Linxing Zhang, Darui Sun, Maosheng Chai, Xianran Xing, Jun Chen, Bingbing Zhang, Jianjun Tian

SCIENCE CHINA Materials 64 (7), 1679-1686 (2021); 10.1007/s40843-020-1565-8

Dual-responsive shape memory polymer arrays with smart and precise multiple-wetting controllability

Dongjie Zhang, Qixing Xia, Hua Lai, Zhongjun Cheng, Pengchang Liu, Haiyang Zhang, Yuyan Liu, Lei Jiang

SCIENCE CHINA Materials 64 (7), 1801-1812 (2021); 10.1007/s40843-020-1554-y

Epitaxial thin-film Pd_1-xFe_x alloy: a tunable ferromagnet for superconducting spintronics

Alireza Esmaeili, Igor V. Yanilkin, Amir I. Gumarov, Iskander R. Vakhitov, Bulat F. Gabbasov, Roman V. Yusupov, Dmitriy A. Tatarsky, Lenar R. Tagirov

SCIENCE CHINA Materials 64 (5), 1246-1255 (2021); 10.1007/s40843-020-1479-0

Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots

Zhiqing Wang, Yueli Liu, Jie Shen, Wen Chen, Jun Miao, Ang Li, Ke Liu, Jing Zhou

SCIENCE CHINA Materials 63 (12), 2497-2508 (2020); 10.1007/s40843-020-1380-5

Full-temperature covered switching material with triple optic-dielectric states in a lead-free hybrid perovskite

Tie Zhang, Lulu Chu, Zhixu Zhang, Jie Li, Wanying Zhang, Pingping Shi, Qiong Ye, Da-Wei Fu

SCIENCE CHINA Materials 63 (11), 2281-2288 (2020); 10.1007/s40843-020-1325-4

Floating-gate based PN blending optoelectronic synaptic transistor for neural machine translation

Xianghong Zhang, Enlong Li, Rengjian Yu, Lihua He, Weijie Yu, Huipeng Chen, Tailiang Guo

SCIENCE CHINA Materials 65 (5), 1383-1390 (2022); 10.1007/s40843-021-1901-2

Flexible neuromorphic electronics based on low-dimensional materials

Tengyu Jin, Jing Gao, Yanan Wang, Wei Chen

SCIENCE CHINA Materials 10.1007/s40843-021-1979-3

Large reversible upconversion luminescence modification and 3D optical information storage in femtosecond laser irradiation-subjected photochromic glass

Daiwen Xiao, Xiongjian Huang, Yangke Cun, Zhen Hu, Zan Xu, Xue Bai, Yingzhu Zi, Lixiang Fu, Asif Ali Haider, Jianbei Qiu, Zhiguo Song, Guoping Dong, Zhengwen Yang

SCIENCE CHINA Materials 65 (6), 1586-1593 (2022); 10.1007/s40843-021-1932-y

Photoelectronic Information Materials