Study of phase change materials for phase change random access memory
Abstract
Phase change memory technology, which is regarded as one of the most promising candidates for the next generation non-volatile memory technology, has achieved rapid development in the past ten years. Meanwhile, related products based on this technology have been put into the market and mass production has come true. With the development of phase change memory technology, the fundamental research has become a hot topic in the fields of information, materials, and so on. Phase change storage medium based on chalcogenide is the basis and core of phase change memory. The performance of phase change memory is determined by phase change material’s performance. In this paper, the industrialization status of phase change memory are briefly introduced firstly, then the research progress of the commonly used GeSbTe phase change materials and the main phase transition mechanism is summarized. Finally, the C doping modification of the traditional GeSbTe and the phase change mechanism of C-doped GeSbTe materials is analyzed.
