The influence of electron transport layer on magnetic-field effect of organic light-emitting diode
Abstract
<p indent="0mm">In this paper, Alq<sub>3</sub>:Liq is used as the electron transport layer, and the optical-electromagnetic integrated measurement technology is used to study the effect of the electron transport layer on the magnetic-field effect of the organic light-emitting diode. At different voltages and temperatures, we measured the changes in the current intensity and electroluminescence intensity of the device (ITO/MoO<sub>3</sub>/NPB/Alq<sub>3</sub>/Alq<sub>3</sub>:Liq/CsCl/Al) with the effect of an external magnetic field, and studied the magnetic conductance effect (MC) and magneto-luminescence effect (MEL) of the device under different voltages and different doping thicknesses. The mechanism of the magnetic-field effect of the device at low temperature is also discussed. The MC and MEL of devices with different doping thicknesses show different changes, moreover, the MC and MEL curves of devices with the same doped thickness at different bias voltages and temperatures also have obvious rules. The magnetic-field effects of the device are discussed using the theory of hyperfine interaction (HFI), singlet exciton fission (STT), and triplet-triplet exciton quenching (TTA). The experimental results prove that by changing the doping thickness of the electron transport layer, the electron injection can be effectively controlled, so that the triplet exciton concentration of the light-emitting layer can be adjusted, and finally the organic magnetic effect can be adjusted. The study of the above phenomena in this paper further enriches the experimental phenomena of organic magnetic-field effects, and also provides a new method for regulating the organic magnetic-field effects by changing the doping thickness of the electron transport layer.</p>
