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Chinese Science Bulletin, Volume 64 , Issue 21 : 2163-2165(2019) https://doi.org/10.1360/TB-2019-0194

New progress of the epitaxy of two dimensional single-crystal hexagonal boron nitride by interface regulation

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  • ReceivedJun 15, 2019
  • AcceptedJun 21, 2019

Abstract

There is no abstract available for this article.


References

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  • Figure 1

    (Color online) Design of the epitaxy on the symmetry broken substrate. (a) Unidirectionally aligned epitaxy of the material with inversion symmetry on the substrate with inversion symmetry; (b) epitaxy of the material without inversion symmetry on the substrate of inversion symmetry, which brings two domain orientations with rotation angle of 180º; (c) unidirectionally aligned epitaxy of the material without inversion symmetry on the substrate of inversion asymmetry

  • Figure 2

    (Color online) Epitaxy, characterization and growth kinetics of single-crystal hexagonal boron nitride. (a) Image of single-crystal copper foil; (b) scanning electron microscope image of as-grown unidirectionally aligned hexagonal boron nitride domains; (c) low energy electron diffraction pattern of single-crystal Cu(110) foil; (d) low energy electron diffraction pattern of single-crystal hexagonal boron nitride; (e) atomic force microscope scan of hexagonal boron nitride on Cu(110); (f) scanning tunneling microscope image of hexagonal boron nitride on Cu(110); (g) schematic diagrams of the configuration of the hBN lattice and the atomic step along with <211> direction on Cu(110); (h) formation energies of edge-guided growth of hexagonal boron nitride with respect to different rotation angle between N-zigzag and Cu<211> direction

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