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European Physical Journal AP(Applied Physics), Volume 11 , Issue 3 : 227-229(2000) https://doi.org/10.1051/epjap:2000165

Noise measurements on single electron transistors using bias switching read-out

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  • ReceivedMar 1, 2000
  • AcceptedAug 13, 2000
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Abstract


References

[1] Starmark B., Henning T., Claeson T., Delsing P., Korotkov A.N.. J. Appl. Phys., 1999, 86: 2132 Google Scholar

[2] Krupenin V.A., Presnov D.E., Savvateev M.N., Scherer H., Zorin A.B., Niemeyer J.. J. Appl. Phys., 1998, 84: 3212 Google Scholar

[3] Lam Chok Sing M., Dolabdjian C., Gunther C., Bloyet, D., Certenais J.. Rev. Sci. Instrum., 1996, 67: 796 Google Scholar

[4] Dolan G.. Appl. Phys. Lett., 1977, 31: 337 Google Scholar

[5] The large difference in the capacitance of our planar gate structures is due to different substrates: small C g corresponds to a device on a 120-nm thick Si3N4 membrane while the other one was made on thermally oxidized silicon. Google Scholar

[6] A simplified version of the Stanford SR570 current preamplifier. Google Scholar

[7] Programs for SET calculations were provided by A.N. Korotkov. Google Scholar

[8] A.N. Korotkov, Appl. Phys. Lett. 69, 2593 (1996). Google Scholar

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