SCIENCE CHINA Information Sciences, Volume 61 , Issue 6 : 069405(2018) https://doi.org/10.1007/s11432-017-9264-0

GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs

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  • ReceivedAug 11, 2017
  • AcceptedOct 10, 2017
  • PublishedApr 16, 2018


There is no abstract available for this article.


This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 61534004, 60806033, 61474004), National High Technology Research and Development Program of China (Grant No. 2015AA016501), and National Key Research and Development Plan (Grant No. 2016YFA0200504).


Appendix A.


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  • Figure 1

    (Color online) HRXRD and HRTEM results of samples. (a) HRXRD spectrum obtained from sample without and with SPE at $500^\text{o}$C, 600 s, HRXRD spectrum of sample with SPE at (b) different annealing temperature ($400^\text{o}$C–$600^\text{o}$C) and (c) different annealing time (60–600 s), (d) HRTEM pictures of SPE sample formed at the optimal condition.